Gallium oxide (Ga<inf>2</inf>O<inf>3</inf>) is an ultra-wide band gap material which has been receiving increasing interest for its potential applications in power electronics, ultraviolet (UV) photodetectors, and gas sensors. In this study, we have synthesized β-phase Ga<inf>2</inf>O<inf>3</inf> on n-Si substrate using the electrodeposition technique, and investigated its properties for use in photodetector applications for broadband detection combining Si and Ga<inf>2</inf>O<inf>3</inf>. X-ray diffractometer (XRD), scanning electron microscope (SEM) with energy dispersive x-ray (EDX) analysis were conducted to illuminate structural and morphological behaviors of the Ga<inf>2</inf>O<inf>3</inf>. Ag metallic contacts on the Ga<inf>2</inf>O<inf>3</inf>/n-Si junction and Al ohmic contact on the back surface of the n-Si were obtained by thermal evaporation technique. Thus, Ag/Ga<inf>2</inf>O<inf>3</inf>/n-Si Schottky-type photodetectors were fabricated and characterized by current–voltage (I-V) measurements depending on various light power intensities and wavelengths ranging from UV to near-infrared (NIR). The diode characteristics, as well as the photodetection parameters such as responsivity, specific detectivity, and external quantum efficiency (EQE) were determined and discussed in detail. The Ag/Ga<inf>2</inf>O<inf>3</inf>/n-Si Schottky-type photodetectors showed high performances: 122.88 A/W responsivity, 1.07 × 10¹² Jones specific detectivity, and very high EQE value of 2.18 × 10⁴% at 700 nm wavelength. The obtained Ag/Ga<inf>2</inf>O<inf>3</inf>/n-Si Schottky-type photodetector exhibits promising potential as a candidate for optoelectronic applications in the visible range. These photodetectors can be used in visible light communication, light sensing and cameras.