Scopus
🔓 Açık Erişim YÖKSİS Eşleşti
Ag/Ga2O3/n-Si Schottky-type photodetector for visible light detection
Journal of Materials Science Materials in Electronics · Mayıs 2025
YÖKSİS Kayıtları
Ag/Ga2O3/n-Si Schottky-type photodetector for visible light detection
Journal of Materials Science: Materials in Electronics · 2025 SCI-Expanded
PROFESÖR MURAT YILDIRIM →
Makale Bilgileri
DergiJournal of Materials Science Materials in Electronics
Yayın TarihiMayıs 2025
Cilt / Sayfa36
Scopus ID2-s2.0-105005657285
Erişim🔓 Açık Erişim
Özet
Gallium oxide (Ga<inf>2</inf>O<inf>3</inf>) is an ultra-wide band gap material which has been receiving increasing interest for its potential applications in power electronics, ultraviolet (UV) photodetectors, and gas sensors. In this study, we have synthesized β-phase Ga<inf>2</inf>O<inf>3</inf> on n-Si substrate using the electrodeposition technique, and investigated its properties for use in photodetector applications for broadband detection combining Si and Ga<inf>2</inf>O<inf>3</inf>. X-ray diffractometer (XRD), scanning electron microscope (SEM) with energy dispersive x-ray (EDX) analysis were conducted to illuminate structural and morphological behaviors of the Ga<inf>2</inf>O<inf>3</inf>. Ag metallic contacts on the Ga<inf>2</inf>O<inf>3</inf>/n-Si junction and Al ohmic contact on the back surface of the n-Si were obtained by thermal evaporation technique. Thus, Ag/Ga<inf>2</inf>O<inf>3</inf>/n-Si Schottky-type photodetectors were fabricated and characterized by current–voltage (I-V) measurements depending on various light power intensities and wavelengths ranging from UV to near-infrared (NIR). The diode characteristics, as well as the photodetection parameters such as responsivity, specific detectivity, and external quantum efficiency (EQE) were determined and discussed in detail. The Ag/Ga<inf>2</inf>O<inf>3</inf>/n-Si Schottky-type photodetectors showed high performances: 122.88 A/W responsivity, 1.07 × 10<sup>12</sup> Jones specific detectivity, and very high EQE value of 2.18 × 10<sup>4</sup>% at 700 nm wavelength. The obtained Ag/Ga<inf>2</inf>O<inf>3</inf>/n-Si Schottky-type photodetector exhibits promising potential as a candidate for optoelectronic applications in the visible range. These photodetectors can be used in visible light communication, light sensing and cameras.
Yazarlar (5)
1
Mehmet Yilmaz
2
Adem Koçyiğit
3
Erman Erdogan
4
Murat Yıldırım
5
Maria Luisa Grilli
Kurumlar
Bilecik Şeyh Edebali Üniversitesi
Bilecik Turkey
ENEA Centro Ricerche Casaccia
Rome Italy
Selçuk Üniversitesi
Selçuklu Turkey
Süleyman Demirel Üniversitesi
Isparta Turkey