The current–voltage characteristics of Au/SnO2/n-Si Schottky diode before and after irradiation by 60Co γ-ray with an irradiation dose of 10 kGy have been investigated. The effects of γ-ray irradiation on the main diode parameters have been studied. The forward bias ln(IF)–ln(VF) characteristics confirmed that the conduction mechanism is dominated by the space-charge limited current (SCLC) conduction. Also, the current transport mechanism of the Au/SnO2/n-Si Schottky diode has been examined through ln(IR)–VR1/2 characteristics, indicating that the Schottky emission dominates the current mechanism for 0 kGy and 10 kGy.