Scopus
YÖKSİS Eşleşti
Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO<inf>2</inf>/n-Si Schottky diode with gamma-ray irradiation
Journal of Materials Science: Materials in Electronics · Haziran 2021
YÖKSİS Kayıtları
Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2021 SCI-Expanded
PROFESÖR ÖMER FARUK YÜKSEL →
Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation
Journal of Materials Science: Materials in Electronics · 2021 SCI-Expanded
DOKTOR ÖĞRETİM ÜYESİ ÜMMÜHAN AKIN →
Makale Bilgileri
DergiJournal of Materials Science: Materials in Electronics
Yayın TarihiHaziran 2021
Cilt / Sayfa32 · 15857-15863
Scopus ID2-s2.0-85106278557
Özet
The current–voltage characteristics of Au/SnO2/n-Si Schottky diode before and after irradiation by 60Co γ-ray with an irradiation dose of 10 kGy have been investigated. The effects of γ-ray irradiation on the main diode parameters have been studied. The forward bias ln(IF)–ln(VF) characteristics confirmed that the conduction mechanism is dominated by the space-charge limited current (SCLC) conduction. Also, the current transport mechanism of the Au/SnO2/n-Si Schottky diode has been examined through ln(IR)–VR1/2 characteristics, indicating that the Schottky emission dominates the current mechanism for 0 kGy and 10 kGy.
Yazarlar (6)
1
Fatime Duygu Akgül
2
S. Eymur
ORCID: 0000-0003-3346-6010
3
Ümmühan Akın
4
Ömer Faruk Yüksel
5
Hande Karadeniz
6
Nihat Tuğluoğlu
Kurumlar
Giresun Üniversitesi
Giresun Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
21
Atıf
6
Yazar