Scopus
YÖKSİS Eşleşti
Oscillator strengths for the intersubband transitions in a CdS-SiO<inf>2</inf> quantum dot with hydrogenic impurity
Physica E: Low-Dimensional Systems and Nanostructures · Ocak 2007
YÖKSİS Kayıtları
Oscillator strengths for the intersubband transitions in a CdS SiO2 quantum dot with hydrogenic impurity
Physica E: Low-dimensional Systems and Nanostructures · 2007 SCI-Expanded
PROFESÖR HALUK ŞAFAK →
Makale Bilgileri
DergiPhysica E: Low-Dimensional Systems and Nanostructures
Yayın TarihiOcak 2007
Cilt / Sayfa36 · 40-44
Scopus ID2-s2.0-33845710000
Özet
In this study, we have calculated the oscillator strengths for intersubband electronic transitions associated with an on-center impurity in a spherical quantum dot. Numerical calculations have been performed for both infinite confinement case and for different finite confining potential values in a spherical CdS/SiO2 quantum dot. Also, for comparison purpose, oscillator strengths for a spherical ZnS/SiO2 quantum dot with an infinite confinement potential are evaluated. © 2006 Elsevier B.V. All rights reserved.
Yazarlar (2)
1
Sait Yılmaz
2
Haluk Şafak
Anahtar Kelimeler
Impurity
Intersubband transitions
Oscillator strengths
Quantum dots
Kurumlar
Erciyes Üniversitesi
Kayseri Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
99
Atıf
2
Yazar
4
Anahtar Kelime