Scopus
YÖKSİS Eşleşti
Temperature dependence of current-voltage characteristics of Al/p-Si (1 0 0) Schottky barrier diodes
Physica B: Condensed Matter · Temmuz 2009
YÖKSİS Kayıtları
Temperature dependence of current voltage characteristics of Al p Si 100 Schottky barrier diodes
Physica B: Condensed Matter · 2009 SCI-Expanded 32 atıf
PROFESÖR ÖMER FARUK YÜKSEL →
Makale Bilgileri
DergiPhysica B: Condensed Matter
Yayın TarihiTemmuz 2009
Cilt / Sayfa404 · 1993-1997
Scopus ID2-s2.0-67349156057
Özet
The current-voltage (I-V) characteristics on Al/p-Si (1 0 0) Schottky barrier diodes in the temperature range 100-300 K were carried out. We have tried to determine some intrinsic and contact properties such as barrier heights, ideality factor, series resistance, and carrier concentrations. The apparent barrier height and the ideality factor calculated by using thermionic emission (TE) theory were found to be strongly temperature dependent. Evaluation of forward I-V data reveals a decrease in the zero-bias barrier height (ΦB0), but an increase in the ideality factor (n) with decrease in temperature. From the reverse-bias I-V graphs, it is found that the experimental carrier density (NA) values have increased with increasing temperature. © 2009 Elsevier B.V. All rights reserved.
Yazarlar (1)
1
Ömer Faruk Yüksel
Anahtar Kelimeler
Barrier height
Ideality factor
I-V characteristics
Metal-semiconductor contact
Schottky barrier diode
Kurumlar
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
52
Atıf
1
Yazar
5
Anahtar Kelime