Scopus
YÖKSİS Eşleşti
The double Gaussian distribution of inhomogeneous barrier heights in the organic-on-inorganic Schottky devices
Physica Status Solidi (A) Applications and Materials Science · Kasım 2012
YÖKSİS Kayıtları
The double Gaussian distribution of inhomogeneous barrier heights in the organic on inorganic Schottky devices
physica status solidi (a) · 2012 SCI-Expanded 7 atıf
PROFESÖR ÖMER FARUK YÜKSEL →
The double Gaussian distribution of inhomogeneous barrier heights in the organic on inorganic Schottky devices
physica status solidi (a) · 2012 SCI-Expanded
PROFESÖR HALUK ŞAFAK →
Makale Bilgileri
DergiPhysica Status Solidi (A) Applications and Materials Science
Yayın TarihiKasım 2012
Cilt / Sayfa209 · 2313-2316
Scopus ID2-s2.0-84869806433
Özet
We have fabricated an Au/perylene-monoimide (PMI)/n-Si organic-on-inorganic Schottky device by spin coating of PMI solution on an n-Si semiconductor wafer. Current-voltage (I-V) measurements on the device in the temperature range of 75-300 K were carried out. An abnormal decrease in the experimental barrier height φB and an increase in the ideality factor n with a decrease in temperature have been observed. This behaviour has been explained on the basis of thermionic emission theory with a double Gaussian distribution of the barrier heights due to the barrier height inhomogeneities. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Yazarlar (4)
1
Nihat Tuğluoğlu
2
Ömer Faruk Yüksel
3
Haluk Şafak
4
S. Karadeniz
Anahtar Kelimeler
barrier height
Gaussian distribution
organic semiconductors
perylene-monoimide
Schottky diodes
Kurumlar
Faculty of Science
Konya Turkey
Sarayköy Nuclear Research and Training Center
Ankara Turkey
Metrikler
15
Atıf
4
Yazar
5
Anahtar Kelime