Scopus
YÖKSİS DOI Eşleşti
SJR Q1
Frequency dependent interface state properties of a Schottky device based on perylene-monoimide deposited on n-type silicon by spin coating technique
Materials Science in Semiconductor Processing · Haziran 2013
YÖKSİS Kayıtları
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
Materials Science in Semiconductor Processing · 2013 SCI-Expanded 11 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
Materials Science in Semiconductor Processing · 2013 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
YÖKSİS Kayıtları — ISSN Eşleşmesi
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
2013 ISSN: 13698001 SCI-Expanded 11 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
2013 ISSN: 13698001 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices
2019 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Green preparation of Carbon Quantum dots using Gingko biloba to sensitize TiO2 for the photohydrogen production
2020 ISSN: 1369-8001 SCI-Expanded
Dr. Öğr. Üyesi GİZEM YILDIZ →
Green preparation of Carbon Quantum dots using Gingko biloba to sensitize TiO2 for the photohydrogen production
2020 ISSN: 1369-8001 SCI-Expanded
Prof. Dr. GÜLŞİN ARSLAN →
Hydrothermally synthesized UV light active zinc stannate:tin oxide (ZTO:SnO2) nanocomposite photocatalysts for photocatalytic applications
2020 ISSN: 1369-8001 SCI-Expanded
Doç. Dr. TEOMAN ÖZTÜRK →
Photosensing performances of heterojunctions-based photodiodes with novel complex interlayers
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Supercapacitor behaviors of carbon quantum dots by green synthesis method from tea fermented with Kombucha
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Si-based photosensitive diode with novel Zn-doped nicotinate/nicotinamide mixed complex interlayer
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Supercapacitor behaviors of carbon quantum dots by green synthesis method from tea fermented with kombucha
2022 ISSN: 1369-8001 SCI-Expanded Q2
Doç. Dr. CANAN BAŞLAK →
CeO2:BaMoO4 nanocomposite based 3D-printed electrodes for electrochemical detection of the dopamine
2024 ISSN: 1369-8001 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
2024 ISSN: 1369-8001 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature
2024 ISSN: 1369-8001 SCI Q2
Prof. Dr. HAZİRET DURMUŞ →
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
2024 ISSN: 1369-8001 SCI-Expanded Q1
Dr. Öğr. Üyesi FATİH DURMAZ →
Makale Bilgileri
ISSN13698001
Yayın TarihiHaziran 2013
Cilt / Sayfa16 · 786-791
Scopus ID2-s2.0-84877577718
Özet
We have reported a detailed investigation of frequency dependent properties of the Au/perylene-monoimide (PMI)/n-Si Schottky diodes in this study. Schottky diodes based on PMI have been fabricated by spin coating method. The capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics have been measured in the frequency range from 30 kHz to 1 MHz at room temperature. The values of measured capacitance Cm and conductance Gm under both reverse and forward bias have been corrected for the effect of series resistance to obtain the real diode capacitance and the conductance values. The density of interface states (Dit) distribution profiles as a function of frequency has been extracted from the corrected C-V and G-V measurements. Interface trap states of the PMI/n-Si Schottky device have decreased by increasing the applied frequency and were found to be 8.13×1011 and 1.75×1011 eV-1 cm-2 for 30 kHz and 1 MHz, respectively. © 2013 Elsevier Ltd. All rights reserved.
Yazarlar (4)
1
Nihat Tuğluoğlu
2
Ömer Faruk Yüksel
3
S. Karadeniz
4
Haluk Şafak
Anahtar Kelimeler
Capacitance-voltage
Conductance-voltage
Current-voltage
Interface state density
Organic semiconductor
Perylene-monoimide
Schottky device
Series resistance
Kurumlar
Faculty of Science
Konya Turkey
Sarayköy Nuclear Research and Training Center
Saray Turkey
Scimago Dergi (ISSN Eşleşmesi)
Materials Science in Semiconductor Processing
Q1
SJR Skoru0,767
H-Index105
YayıncıElsevier Ltd
ÜlkeUnited Kingdom
Condensed Matter Physics (Q1)
Mechanical Engineering (Q1)
Mechanics of Materials (Q1)
Materials Science (miscellaneous) (Q2)
Metrikler
31
Atıf
4
Yazar
8
Anahtar Kelime