Scopus
YÖKSİS DOI Eşleşti
SJR Q1
Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique
Journal of Alloys and Compounds · Ocak 2014
YÖKSİS Kayıtları
Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique
Journal of Alloys and Compounds · 2014 SCI-Expanded 7 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
YÖKSİS Kayıtları — ISSN Eşleşmesi
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Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique
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Thickness dependence of dispersion parameters of the MoOx thin films prepared using the vacuum evaporation technique
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Thickness dependence of dispersion parameters of the MoOx thin films prepared using the vacuum evaporation technique
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Electrical properties of Au/perylene-monoimide/p-Si Schottky diode
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The role of Triton X-100 as a surfactant on the CdO nanostructures grown by the SILAR method.
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Study of the local structure and electrical properties of gallium substituted LLZO electrolyte materials
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The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization
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Study of the local structure and electrical properties of gallium substituted LLZO electrolyte materials
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Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
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Nitrogen-doped CQDs to enhance the power conversion efficiency of perovskite solar cells via surface passivation
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Magnetic phase transitions of all-d metal Heusler type model
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Makale Bilgileri
ISSN09258388
Yayın TarihiOcak 2014
Cilt / Sayfa582 · 696-702
Scopus ID2-s2.0-84883719296
Özet
Rubrene thin film has been deposited by spin coating technique. The optical band gap properties of rubrene thin film have been investigated in the spectral range 200700 nm. The results of the absorption coefficient (α) were analyzed in order to determine the optical band gap and Urbach energy of the film. The absorption spectra recorded in the UVvis region shows two peaks at 250 nm and 300 nm. The analysis of the spectral behavior of the absorption coefficient (α) in the absorption region revealed indirect allowed transition with corresponding energy 2.31 eV. The value of Urbach energy (E U) was determined to be 1.169 eV. The currentvoltage (IV) characteristics and electrical conduction properties of rubrene/ n-Si device fabricated by spin coating method have also been investigated. The IV characteristic in dark was showed the rectification effect due to the formation of Schottky barrier at rubrene/silicon interface. From analyzing the I-V measurement for the device, the basic device parameters such as barrier height, ideality factor and series resistance were determined. At the low-voltage region, the current conduction in Au/rubrene/n-Si device is ohmic type. The charge transport phenomenon appears to be space charge limited current (SCLC) at higher-voltage regions. © 2013 Elsevier B.V. All rights reserved.
Yazarlar (5)
1
Nihat Tuğluoğlu
2
Behzad Barış
3
Hatice Gürel
4
S. Karadeniz
5
Ömer Faruk Yüksel
Anahtar Kelimeler
Device parameters
Optical band gap
Rubrene organic compound
Spin coating technique
Kurumlar
Giresun Üniversitesi
Giresun Turkey
Sarayköy Nuclear Research and Training Center
Saray Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Journal of Alloys and Compounds
Q1
SJR Skoru1,079
H-Index251
YayıncıElsevier B.V.
ÜlkeNetherlands
Materials Chemistry (Q1)
Mechanical Engineering (Q1)
Mechanics of Materials (Q1)
Metals and Alloys (Q1)
Metrikler
32
Atıf
5
Yazar
4
Anahtar Kelime