Scopus
YÖKSİS Eşleşti
Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity
Physica B: Condensed Matter · Aralık 2017
YÖKSİS Kayıtları
Improvement of diode parameters in Al/n-Si Schottky diodes with Coronene interlayer using variation of the illumination intensity
Physica B: Condensed Matter · 2017 SCI-Expanded
PROFESÖR ÖMER FARUK YÜKSEL →
Makale Bilgileri
DergiPhysica B: Condensed Matter
Yayın TarihiAralık 2017
Cilt / Sayfa527 · 1-6
Scopus ID2-s2.0-85030095645
Özet
In present work, Coronene thin films on Si wafer have been deposited by the spin coating method. It has been ultimately produced Al/Coronene/n-Si/In Schottky diode. Current–voltage (I-V) measurements have been used to determine the effect of illumination intensity in the Schottky diodes. The barrier height (ΦB) values increased as ideality factor (n) values decreased with a increase in illumination intensity. The ΦB values have been found to be 0.697 and 0.755 eV at dark and 100 mW/cm2, respectively. The n values have been found to be 2.81 and 2.07 at dark and 100 mW/cm2, respectively. Additionally, the series resistance (Rs) values from modified Norde method and interface state density (Nss) values using current-voltage measurements have been determined. The values of Rs have been found to be 1924 and 5094 Ω at dark and 100 mW/cm2, respectively. The values of Nss have been found to be 4.76 × 1012 and 3.15 × 1012 eV−1 cm−2 at dark and 100 mW/cm2, respectively. The diode parameters are improved by applying the variation of illumination intensity to the formed Schottky diodes.
Yazarlar (5)
1
Osman Pakma
2
S. Çavdar
3
H. Koralay
4
Nihat Tuğluoğlu
5
Ömer Faruk Yüksel
Anahtar Kelimeler
Barrier height
Coronene
Ideality factor
Illumination intensity
Organic semiconductor
Schottky diode
Kurumlar
Batman University
Batman Turkey
Gazi Üniversitesi
Ankara Turkey
Giresun Üniversitesi
Giresun Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
37
Atıf
5
Yazar
6
Anahtar Kelime