Scopus
YÖKSİS Eşleşti
The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
Journal of Materials Science: Materials in Electronics · Haziran 2019
YÖKSİS Kayıtları
The synthesis of 4,4-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2019 SCI-Expanded
DOKTOR ÖĞRETİM ÜYESİ ÜMMÜHAN AKIN →
The synthesis of 4,4\u2032-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
Journal of Materials Science: Materials in Electronics · 2019 SCI-Expanded
PROFESÖR MURAT YILDIRIM →
The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS · 2019 SCI-Expanded
PROFESÖR ÖMER FARUK YÜKSEL →
Makale Bilgileri
DergiJournal of Materials Science: Materials in Electronics
Yayın TarihiHaziran 2019
Cilt / Sayfa30 · 10408-10418
Scopus ID2-s2.0-85064829033
Özet
In the present study, firstly, a 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) (FC) organic compound was synthesized and its structural and optical characterization were carried. Then, the effect on the device of the FC thin film prepared between n-type silicon substrate and gold metal by the spin coating technique was reported. The ideality factor (n), barrier height (Φ B) and series resistance (Rs) values of the prepared structure from the I-V data have been found at 1.08, 0.78 eV and 240 Ω at room temperature (300 K), respectively. According to the Gaussian distribution of the barrier height obtained from the various temperature ranges (220–380 K), the Φ b and A* values from the ordinate intercept and the slope of the modified Richardson curve of ln(I0/T2)-(q2σs2/2k2T2) versus 1/T plot which has been found to be 0.97 eV and 114 A/cm2K2, respectively. Results indicate that the high barrier height is achieved for the Au/FC/n-Si metal–organic layer-semiconductor diode as compared to the Au/n-Si metal–semiconductor (MS) diode.
Yazarlar (7)
1
Murat Yıldırım
2
A. Erdoğan
3
Ömer Faruk Yüksel
4
Mahmut Kuş
5
Mustafa Can
6
Ümmühan Akın
7
Nihat Tuğluoğlu
Kurumlar
Bursa Teknik Üniversitesi
Bursa Turkey
Gebze Teknik Üniversitesi
Gebze Turkey
Giresun Üniversitesi
Giresun Turkey
İzmir Kâtip Çelebi Üniversitesi
Izmir Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
9
Atıf
7
Yazar