CANLI
Yükleniyor Veriler getiriliyor…
/ Makaleler / Scopus Detay
Scopus YÖKSİS Eşleşti

Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer

ECS Journal of Solid State Science and Technology · Ocak 2021

YÖKSİS DOI Eşleşmesi Bulundu

Bu Scopus makalesi YÖKSİS veritabanında da kayıtlı. Aşağıda YÖKSİS verilerini görebilirsiniz.

YÖKSİS Kayıtları
Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY · 2021 SCI-Expanded
PROFESÖR ÖMER FARUK YÜKSEL →
Illumination Dependent Electrical and Photovoltaic Properties of Au/n-Type Si Schottky Diode with Anthracene-Based NAMA Interlayer
ECS Journal of Solid State Science and Technology · 2021 SCI-Expanded
DOKTOR ÖĞRETİM ÜYESİ ÜMMÜHAN AKIN →

Makale Bilgileri

DergiECS Journal of Solid State Science and Technology
Yayın TarihiOcak 2021
Cilt / Sayfa10
Özet A Schottky diode based on an organic semiconductor 9-[(5-nitropyridin-2-aminoethyl) iminiomethyl]-anthracene (NAMA) was fabricated on n-Si using a spin-coating technique. The current-voltage (I-V) measurements of Au/NAMA/n-Si/In were taken under dark and various illumination levels to investigation of the change in electrical and photoresponse characteristics such as ideality factor, barrier height and series resistance with illumination. Reverse bias saturation current (I 0), ideality factor (n), and barrier height (Φ B ) values were found as 6.43 10-8 A, 3.54 and 0.756 eV in dark (low region); and 2.17 10-10 A, 1.39 and 0.903 eV under 100 W illumination level (low region). The forward bias semi logarithmic (I-V) characteristics showed two current-transport mechanisms acting in the diode. It has been shown that all electrical parameters are sensitive to illumination. The current-transport mechanisms of the prepared diode was examined by using ln(I F ) vs ln(V F ) and ln(I R )-V R 1/2 plots. Moreover, Au/NAMA/n-Si diode showed good photovoltaic performance that shows that the fabricated diode can be used as a photodiode in optoelectronic applications.

Yazarlar (5)

1
S. Eymur
ORCID: 0000-0003-3346-6010
2
Nihat Tuğluoğlu
3
Ahmet Apaydin
4
Mmühan Akin
5
Ömer Faruk Yüksel

Kurumlar

Giresun Üniversitesi
Giresun Turkey
Sel uk University
Konya Turkey

Metrikler

12
Atıf
5
Yazar

Sistemimizdeki Yazarlar