Scopus
Comprehensive frequency and voltage analysis of a BODIPY-based organic interlayer in Au/n-Si Schottky structures
Physica B Condensed Matter · Nisan 2026
Makale Bilgileri
DergiPhysica B Condensed Matter
Yayın TarihiNisan 2026
Cilt / Sayfa727
Scopus ID2-s2.0-105029085410
Özet
An Au/BOD-Z-EN/n-Si Schottky diode incorporating a BODIPY-based organic interfacial layer was fabricated and examined under dark conditions. Electrical measurements were performed in the 2 kHz–10 MHz frequency range under forward biases from 0 to 1 V. The dielectric constant, loss tangent, electric modulus, impedance, and phase angle exhibited strong frequency and voltage dependence. At low frequencies, the response was governed by interfacial states and polarization effects, while at higher frequencies these contributions diminished, yielding stable dielectric behavior. Forward bias enhanced carrier injection, reduced interfacial trapping, and shifted the device from capacitive to resistive response. This work provides a comprehensive and systematic frequency- and bias-dependent dielectric and impedance analysis of an Au/BOD-Z-EN/n-Si Schottky diode under dark conditions, offering detailed insight into the role of a BODIPY-based organic interfacial layer in charge transport, dielectric relaxation, and interface state dynamics.
Yazarlar (4)
1
S. Eymur
ORCID: 0000-0003-3346-6010
2
Esra Akköse Aydemir
3
Ömer Faruk Yüksel
4
Nihat Tuğluoğlu
Anahtar Kelimeler
Capacitance
Conductance
Dielectric parameters
Electric modulus
Impedance
Schottky type diode
Kurumlar
Giresun Üniversitesi
Giresun Turkey
Selçuk Üniversitesi
Selçuklu Turkey