Scopus
YÖKSİS Eşleşti
Preparation and characterization of sol–gel-derived n-ZnO thin film for Schottky diode application
Applied Physics A Materials Science and Processing · Mayıs 2015
YÖKSİS Kayıtları
Preparation and characterization of sol gel derived n ZnO thin film for Schottky diode application
Applied Physics A · 2015 SCI-Expanded
PROFESÖR RÜŞTÜ GÜNTÜRKÜN →
Makale Bilgileri
DergiApplied Physics A Materials Science and Processing
Yayın TarihiMayıs 2015
Cilt / Sayfa119 · 547-552
Scopus ID2-s2.0-84930046432
Özet
n-ZnO film has been formed on p-Si substrate using sol–gel spin-coating technique. For structural, optical and morphological characterization, the XRD pattern, SEM images and EDX spectra of the n-ZnO film have been obtained. The optical band gap of n-ZnO has been calculated as 3.29 eV. A Schottky diode application of the film has been performed by evaporation of Au on n-ZnO film. It has been seen that the device has exhibited good rectifying behavior. The current–voltage (I–V) and capacitance–voltage (C–V) measurement of the device has been taken as a function of the frequency, at room temperature. Using I–V curve, the ideality factor and barrier height (Φ<inf>b</inf>) of n-ZnO have been calculated as 1.93 and 0.80 eV, respectively. (Φ<inf>b</inf>) (C–V) has been found 0.86 eV, at 500 kHz frequency.
Yazarlar (6)
1
Mehmet Yilmaz
2
Zakir Caldiran
3
A. R. Deniz
4
Sakir Aydogan
5
R. Güntürkün
6
Abdülmecit Türüt
Kurumlar
Atatürk Üniversitesi
Erzurum Turkey
Dumlupinar Üniversitesi
Kutahya Turkey
Hakkari Üniversitesi
Hakkari Turkey
Istanbul Medeniyet University
Istanbul Turkey
Metrikler
38
Atıf
6
Yazar