Analysis of Electronic Structure and Binding Energy in Five-Electron GaAs/Al<inf>x</inf>Ga<inf>1-x</inf>As Quantum Dots Under Penetrable Confinement Potential

Advanced Theory and Simulations · Ocak 2025

YÖKSİS Kayıtları

Analysis of Electronic Structure and Binding Energy in Five‐Electron GaAs/AlxGa1‐xAs Quantum Dots Under Penetrable Confinement Potential

Advanced Theory and Simulations · 2025 SCI

PROFESÖR BEKİR ÇAKIR →

Makale Bilgileri

DergiAdvanced Theory and Simulations

Yayın TarihiOcak 2025

DOI10.1002/adts.202401375

Scopus ID2-s2.0-105000738906

Erişim🔓 Açık Erişim

Özet In this study, the calculation of average and orbital energies for the ground and excited configurations of five-electron quantum dots (QDs) is performed using the Quantum Genetic Algorithm (QGA) and Hartree-Fock Roothaan (HFR) methods. The average Coulomb and exchange energies of electron pairs, along with one-electron kinetic and Coulomb potential energies, are calculated as a function of the dot radius. A penetrable confinement potential is used as a model to investigate the effects of confinement on both average and orbital energies. Furthermore, this study examines how confinement influences electron probability densities inside and outside the quantum well for ground and excited state configurations. Additionally, the configuration-average binding energy is computed at two different values of the confinement potential. The main conclusion is that the average energy and binding energy go up when the confinement radius is reduced and eventually reach at a fixed value. Other energies rise steadily until reaching their maximum values, after which they decline rapidly as the dot radius continues to decrease. For configurations (Formula presented.) (Formula presented.), an increase in the 1s and 2s orbital energies is observed when the electron in the nl orbital begins to penetrate the quantum well.