Scopus
YÖKSİS Eşleşti
Novel Al/CoFe/p-Si and Al/NiFe/p-Si MS-type photodiode for sensing
Nanotechnology · Ekim 2024
YÖKSİS Kayıtları
Novel Al/CoFe/p-Si and Al/NiFe/p-Si MS-type photodiode for sensing
Nanotechnology · 2025 SCI-Expanded
PROFESÖR MURAT YILDIRIM →
Makale Bilgileri
DergiNanotechnology
Yayın TarihiEkim 2024
Cilt / Sayfa36
Scopus ID2-s2.0-85207594030
Özet
CoFe and NiFe are used in the construction of Si-based metal-semiconductor-type photodiodes. Thin film layers are sputtered onto thep-Si surface where Al metal contacts are deposited using the thermal evaporation technique. Film characteristics of the layers are investigated with respect to the crystalline structure and surface morphology. Their electrical and optical properties are investigated using dark and illuminated current-voltage measurements. When these two diodes are compared, Al/NiFe/p-Si exhibits better rectification properties than Al/CoFe/p-Si diode. There is also a high barrier height where these values for both diodes increase with illumination. According to the current-voltage analysis, the existence of an interlayer causes a deviation in diode ideality. In addition, the response to bias voltage, the derivation of electrical parameters, and the light sensitivity of diodes are evaluated using current-voltage measurements under different illumination intensities and also transient photosensitive characteristics.
Yazarlar (5)
1
Dilber Esra Yıldız
ORCID: 0000-0003-2212-199X
2
H. H. Gullu
ORCID: 0000-0001-8541-5309
3
Murat Yıldırım
4
N. A. Morley
ORCID: 0000-0002-7284-7978
5
Recep Şahingoz
Anahtar Kelimeler
interface
magnetic film
metal-semiconductor
photodiode
Kurumlar
ASELSAN A.Ş.
Yenimahalle Turkey
Bozok Üniversitesi
Yozgat Turkey
Hitit University
Corum Turkey
Selçuk Üniversitesi
Selçuklu Turkey
The University of Sheffield
Sheffield United Kingdom