Scopus
YÖKSİS Eşleşti
Temperature Dependence of Current-Voltage Characteristics of Al/Rubrene/n-GaAs (100) Schottky Barrier Diodes
Materials Today: Proceedings · Ocak 2016
YÖKSİS Kayıtları
Temperature Dependence of Current-Voltage Characteristics of Al/Rubrene/n-GaAs (100) Schottky Barrier Diodes
Materials Today: Proceedings · 2016 CPCI, SCOPUS
PROFESÖR ÖMER FARUK YÜKSEL →
Temperature Dependence of Current-Voltage Characteristics of Al/Rubrene/n-GaAs (100) Schottky Barrier Diodes
Materials Today: Proceedings · 2016 Conference Proceedings Citation Index
PROFESÖR MURAT YILDIRIM →
Makale Bilgileri
DergiMaterials Today: Proceedings
Yayın TarihiOcak 2016
Cilt / Sayfa3 · 1271-1276
Scopus ID2-s2.0-84961620970
Özet
5,6,11,12-tetraphenylnaphthacene (rubrene) is fabricated by spin coating technique on n type GaAs (100) substrate. The current-voltage (I-V) characteristics of Al/rubrene/n-GaAs (100) Schottky diode have been measured in the temperature range of 100-300 K. The experimental values of saturation current (I0), ideality factor (n) and barrier height (ΦB) are calculated as 2.749 pA, 6.051 and 0.297 eV at 100 K and 57.54 pA, 1.918 and 0.870 eV at 300 K, respectively. The values of series resistance (RS) are calculated using Cheung functions at all temperatures. The RS values are found as 1276.4 Ω and 119.7 Ω for 100 K and 300 K, respectively. It is found that barrier heights increased while ideality factors and series resistances decrease with the increasing temperature.
Yazarlar (4)
1
Ömer Faruk Yüksel
2
Nihat Tuğluoğlu
3
F. Çalişkan
4
Murat Yıldırım
Anahtar Kelimeler
Rubrene thin film
Schottky diode
Series resistance
Spin coating
Kurumlar
Giresun Üniversitesi
Giresun Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
11
Atıf
4
Yazar
4
Anahtar Kelime