Scopus
YÖKSİS DOI Eşleşti
SJR Q2
Effect of an ITIC non-fullerene interlayer on electrical properties and external quantum efficiency of Al/ZnO/p-Si Schottky photodiodes
Journal of Materials Science Materials in Electronics · Ekim 2023
YÖKSİS Kayıtları
Effect of an ITIC non-fullerene interlayer on electrical properties and external quantum efficiency of Al/ZnO/p-Si Schottky photodiodes
Journal of Materials Science: Materials in Electronics · 2023 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
Effect of an ITIC non-fullerene interlayer on electrical properties and external quantum efficiency of Al/ZnO/p-Si Schottky photodiodes
Journal of Materials Science: Materials in Electronics · 2023 SCI-Expanded
Doç. Dr. TEOMAN ÖZTÜRK →
YÖKSİS Kayıtları — ISSN Eşleşmesi
High-performance polyoxometalate/p-Si photodetector enabling bias-free detection across the visible–NIR spectrum
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. MEHMET HAKAN ÇOLPAN →
CMTS: An inorganic hole-transport material for efficient and stable perovskite solar cells through surface defect passivation
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. FAHRİYE SARI →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI-Expanded 1 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded
Prof. Dr. İMREN HATAY PATIR →
A study of the influences of transition metal (Mn,Ni) co-doping on the morphological, structural and optical properties of nanostructured CdO films.
2018 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Frequency and voltage dependence of electrical modulus and dielectric studies of spin coated perylene–diimide (PDI) organic semiconductor films
2018 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Structural, morphological and optical studies of nanostructuredcadmium oxide films: the role of pH
2018 ISSN: 0957-4522 SCI
Prof. Dr. HALİT ÇAVUŞOĞLU →
The synthesis of 4,4\u2032-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q2
Prof. Dr. ÖMER FARUK YÜKSEL →
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Solution-processed nanostructured ZnO/CuO composite films and improvement its physical properties by lustrous transition metal silver doping
2020 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
2020 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Makale Bilgileri
ISSN09574522
Yayın TarihiEkim 2023
Cilt / Sayfa34
Scopus ID2-s2.0-85174864230
Özet
Metal-semiconductor (MS) heterojunctions are one of the main components of today’s technology. In the production of metal-semiconductor heterojunctions; metal oxides, insulators or polymers are inserted as interlayers between metal and semiconductor to ameliorate the durability, stability and efficiency of heterojunctions. By improving their durability, stability and efficiency through the use of ITIC as an interlayer material, the performance of these devices can be enhanced. By adding ITIC to the ZnO interlayer, ITIC: ZnO layer heterojunctions applications were carried out in this study. ITIC, a nonfullerene material, is employed as an electron acceptor material in organic solar cells. The ITIC:ZnO composite layer in our study was grown on Si substrates using spin coating method. Subsequently, Al/ZnO/p-Si and Al/ITIC:ZnO/p-Si heterojunctions were produced by physical vapor deposition method and the electrical properties of the produced devices were characterized. In these characterizations, current-voltage measurements were performed in the dark and under various light power illumination intensities ranging from 20 to 100 mW/cm2. From the current-voltage characteristics, various electrical parameters were calculated. While the ideality factor values for Al/ZnO/p-Si were found to be 7.55 and 7.73, it was found as 6.83 and 6.65 for ITIC-doped photodiode using thermionic emission and Cheung models, respectively. The barrier height values for Al/ZnO/p-Si were 0.62 eV, 0.64 eV and 0.64 eV, while the same values were found as 0.60 eV, 0.63 eV and 0.61 eV for Al/ITIC:ZnO/p-Si using the thermionic emission, Cheung and Norde models, respectively. From current transient measurements, photosensitivity, specific detectivity and responsivity were calculated as optoelectronic parameters. Moreover, the heterojunctions demonstrated high external quantum efficiency with the addition of ITIC. According to the results, ITIC component is functional for photodiode and photodetector applications.
Yazarlar (5)
1
Teoman Öztürk
2
Ali Akbar Hussaini
3
Mehmet Okan Erdal
4
Fatih Durmaz
5
Murat Yıldırım
Kurumlar
Necmettin Erbakan Üniversitesi
Meram Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Journal of Materials Science: Materials in Electronics
Q2
SJR Skoru0,493
H-Index117
YayıncıSpringer New York
ÜlkeUnited States
Atomic and Molecular Physics, and Optics (Q2)
Condensed Matter Physics (Q2)
Electrical and Electronic Engineering (Q2)
Electronic, Optical and Magnetic Materials (Q2)
Bioengineering (Q3)
Biomaterials (Q3)
Biomedical Engineering (Q3)
Biophysics (Q3)
Metrikler
7
Atıf
5
Yazar