Scopus
YÖKSİS DOI Eşleşti
SJR Q1
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
Materials Science in Semiconductor Processing · Mart 2024
YÖKSİS Kayıtları
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
Materials Science in Semiconductor Processing · 2024 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
Materials Science in Semiconductor Processing · 2024 SCI-Expanded
Dr. Öğr. Üyesi FATİH DURMAZ →
YÖKSİS Kayıtları — ISSN Eşleşmesi
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
2013 ISSN: 13698001 SCI-Expanded 11 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
2013 ISSN: 13698001 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices
2019 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Green preparation of Carbon Quantum dots using Gingko biloba to sensitize TiO2 for the photohydrogen production
2020 ISSN: 1369-8001 SCI-Expanded
Dr. Öğr. Üyesi GİZEM YILDIZ →
Green preparation of Carbon Quantum dots using Gingko biloba to sensitize TiO2 for the photohydrogen production
2020 ISSN: 1369-8001 SCI-Expanded
Prof. Dr. GÜLŞİN ARSLAN →
Hydrothermally synthesized UV light active zinc stannate:tin oxide (ZTO:SnO2) nanocomposite photocatalysts for photocatalytic applications
2020 ISSN: 1369-8001 SCI-Expanded
Doç. Dr. TEOMAN ÖZTÜRK →
Photosensing performances of heterojunctions-based photodiodes with novel complex interlayers
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Supercapacitor behaviors of carbon quantum dots by green synthesis method from tea fermented with Kombucha
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Si-based photosensitive diode with novel Zn-doped nicotinate/nicotinamide mixed complex interlayer
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Supercapacitor behaviors of carbon quantum dots by green synthesis method from tea fermented with kombucha
2022 ISSN: 1369-8001 SCI-Expanded Q2
Doç. Dr. CANAN BAŞLAK →
CeO2:BaMoO4 nanocomposite based 3D-printed electrodes for electrochemical detection of the dopamine
2024 ISSN: 1369-8001 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
2024 ISSN: 1369-8001 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature
2024 ISSN: 1369-8001 SCI Q2
Prof. Dr. HAZİRET DURMUŞ →
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
2024 ISSN: 1369-8001 SCI-Expanded Q1
Dr. Öğr. Üyesi FATİH DURMAZ →
Makale Bilgileri
ISSN13698001
Yayın TarihiMart 2024
Cilt / Sayfa172
Scopus ID2-s2.0-85181128189
Özet
Recently polyoxometalate (POM) compounds have attracted attentions in optoelectronic fields. They can be used as an interlayer between metals and semiconductors to improve the durability, stability, and efficiency of heterojunctions. The addition of polyoxometalate interlayers resulted in high external quantum efficiency and improved optoelectronic parameters, making it functional for photodiode and photodetector applications. In this study, we synthesized Keggin-type α-A-(nBu4N)3[PW9O34(tBuSiOH)3]-0.5MeCN2 polyoxometalate compound and it was characterized by SEM, FT-IR, and 31P NMR. Electrochemical behaviors of the synthesized POM compound were studied by Galvanostat. Polyoxometalate (POM) compound was deposited on n-Si by spin-coating technique. In addition, effects of POM on the electrical properties of the Al/POM/n-Si/Al device were investigated in detail. The photodiode properties were studied with (I–V) and (I-t) measurements under light intensities ranging from 20 to 100 mW/cm2. Responsivity and detectivity of the POM interlayered photodiode have been increased significantly comparing the undoped one. While Al/n-Si has shown 9.35 × 1010 Jones detectivity and 1.881 A/W responsivity at 20 mW/cm2 light power, Al/POM/n-Si photodiode device has exhibited maximum detectivity (1.29 × 1011 Jones) and responsivity (2.937A/W) at 20 mW/cm2 light power. The external quantum efficiency of polyoxometalate interlayered heterojunction varied from 17.03 % to 34.61 % under various wavelengths. The result revealed that Al/POM/n-Si device can be used for optoelectronic applications.
Yazarlar (7)
1
Ali Akbar Hussaini
2
Mutahire Tok
3
Yasemin Torlak
4
Esma Yenel
5
Fatih Durmaz
6
Mahmut Kuş
7
Murat Yıldırım
Anahtar Kelimeler
Al/POM/n-Si
Optoelectronic
Photodiode
POM
Kurumlar
Konya Technical University
Konya Turkey
Pamukkale Üniversitesi
Denizli Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Materials Science in Semiconductor Processing
Q1
SJR Skoru0,767
H-Index105
YayıncıElsevier Ltd
ÜlkeUnited Kingdom
Condensed Matter Physics (Q1)
Mechanical Engineering (Q1)
Mechanics of Materials (Q1)
Materials Science (miscellaneous) (Q2)
Metrikler
26
Atıf
7
Yazar
4
Anahtar Kelime