Scopus
YÖKSİS DOI Eşleşti
SJR Q2
Calculating the parameters of a Schottky diode using forward bias I–V data: an alternative approach
Bulletin of Materials Science · Eylül 2023
YÖKSİS Kayıtları
Calculating the parameters of a Schottky diode using forward bias I–V data: an alternative approach
BULLETIN OF MATERIALS SCIENCE · 2023 SCI-Expanded
Prof. Dr. ÜLFET ATAV →
Calculating the parameters of a Schottky diode using forward bias I–V data: an alternative approach
BULLETIN OF MATERIALS SCIENCE · 2023 SCI-Expanded
Prof. Dr. HAZİRET DURMUŞ →
YÖKSİS Kayıtları — ISSN Eşleşmesi
Dielectric characterization of Al/PCBM:ZnO/p-Si structures for wide-range frequency
2021 ISSN: 0250-4707 SCI-Expanded Q4
Prof. Dr. MURAT YILDIRIM →
Calculating the parameters of a Schottky diode using forward bias I–V data: an alternative approach
2023 ISSN: 0250-4707 SCI-Expanded Q4
Prof. Dr. HAZİRET DURMUŞ →
Calculating the parameters of a Schottky diode using forward bias I–V data: an alternative approach
2023 ISSN: 0250-4707 SCI-Expanded Q4
Prof. Dr. ÜLFET ATAV →
Makale Bilgileri
ISSN02504707
Yayın TarihiEylül 2023
Cilt / Sayfa46
Scopus ID2-s2.0-85168421979
Özet
In cases where the current through the junction of a Schottky diode can be described by thermionic emission (TE) theory, a method is presented to calculate the device parameters using forward bias I–V data. In the presented method, (V–IR S)/nβ = Λ(V) was defined as a variable. The values of the new variable Λ(V) were determined by using the characteristic variation of the power exponent α(V) with bias voltage. Device parameters such as the zero-bias barrier height ∅ BO , ideality factor n and series resistance R S were calculated analytically using power exponent α(V) together with Λ(V) without any limitation. The performance of the method in calculating parameters was tested using simulated and real (I–V) data. Simulated (I–V) data was formed systematically with different values of n, R S and ∅ BO for five temperatures. The parameter values calculated from these (I–V) data using the suggested method were compared with the values used to create the simulated (I–V) data. Second, the method was tested using I–V data of real Schottky structures. Experimental (I–V) data of the Re/n-GaAs and Au/(SnS-doped PVC)/n–Si Schottky diodes measured at various temperatures were used. The currents were recalculated using the parameters calculated from both simulated (I–V) and real (I–V) data. These currents were compared with the initial currents for each temperature.
Yazarlar (2)
1
Haziret Durmuş
2
Ülfet Atav
Anahtar Kelimeler
contact parameters
parameter extraction
Schottky diode
thermionic emission
Kurumlar
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Bulletin of Materials Science
Q2
OA
SJR Skoru0,406
H-Index91
YayıncıIndian Academy of Sciences
ÜlkeIndia
Mechanics of Materials (Q2)
Materials Science (miscellaneous) (Q3)
Metrikler
2
Atıf
2
Yazar
4
Anahtar Kelime