Scopus
YÖKSİS Eşleşti
Electrical properties of Au/perylene-monoimide/p-Si Schottky diode
Journal of Alloys and Compounds · Ocak 2013
YÖKSİS Kayıtları
Electrical properties of Au perylene monoimide p Si Schottky diode
Journal of Alloys and Compounds · 2013 SCI-Expanded 11 atıf
PROFESÖR ÖMER FARUK YÜKSEL →
Electrical properties of Au/perylene-monoimide/p-Si Schottky diode
JOURNAL OF ALLOYS AND COMPOUNDS · 2013 SCI
PROFESÖR BERNA GÜL →
Electrical properties of Au perylene monoimide p Si Schottky diode
Journal of Alloys and Compounds · 2013 SCI-Expanded
PROFESÖR HALUK ŞAFAK →
Makale Bilgileri
DergiJournal of Alloys and Compounds
Yayın TarihiOcak 2013
Cilt / Sayfa577 · 30-36
Scopus ID2-s2.0-84878007298
Özet
In this work, we have fabricated an Au/perylene-monoimide (PMI)/p-Si Schottky barrier diode. We have investigated how electrical and interface characteristics like current-voltage characteristics (I-V), ideality factor (n), barrier height (UB) and series resistance (Rs) of diode change with temperature over a wide range of 100-300 K. Detailed analysis on the electrical properties of structure is performed by assuming the standard thermionic emission (TE) model. Possible mechanisms such as image force lowering, generation- recombination processes and interface states which cause deviations of n values from the unity have been discussed. Cheung-Cheung method is also employed to analysis the current-voltage characteristics and a good agreement is observed between the results. It is shown that the electronic properties of Schottky diode are very sensitive to the modification of perylene-monoimide (PMI) interlayer organic material and also to the temperature. The ideality factor was found to decrease and the barrier height to increase with increasing temperature. The temperature dependence of barrier height shows that the Schottky barrier height is inhomogeneous in nature at the interface. Such inhomogeneous behavior was explained on the basis of thermionic emission mechanism by assuming the existence of a Gaussian distribution of barrier heights. © 2013 Elsevier B.V. All rights reserved.
Yazarlar (5)
1
Ömer Faruk Yüksel
2
Nihat Tuğluoğlu
3
B. Gulveren
4
Haluk Şafak
5
Mahmut Kuş
Anahtar Kelimeler
Electronic materials
Organic compounds
Schottky diode
Semiconductors
Thin films
Kurumlar
Sarayköy Nuclear Research and Training Center
Saray Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
46
Atıf
5
Yazar
5
Anahtar Kelime