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Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions

Optical and Quantum Electronics · Kasım 2019

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YÖKSİS Kayıtları
Determination of electrical parameters of ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes in dark and illumination conditions
Optical and Quantum Electronics · 2019 SCI
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Makale Bilgileri

DergiOptical and Quantum Electronics
Yayın TarihiKasım 2019
Cilt / Sayfa51
Özet In this work, ITO/CZTS/CdS/Ag and ITO/CdS/CZTS/Ag heterojunction diodes has been produced, CdS and CZTS thin film layers of the diode have been produced on ITO glass at room temperature using PLD technique. It has been produced CZTS thin films that have a polycrystalline structure that were annealed at the sulfurization temperatures of 325 °C, 350 °C and 375 °C when as-grown CZTS thin film has the amorphous structure. CdS thin films have been grown on substrate at room temperature in 15, 20 and 25 min that have polycrystalline structures. Then, CdS thin film deposited for 20 min was annealed at 200 °C temperature and, has better crystal structure compared to other thin films. Diodes have been composed of CZTS thin film annealed in 375 °C, CdS thin film was grown during 20 min and, then annealed at 200 °C temperature. According to J–V characteristics of diode, diodes exhibit some rectification behaviour in dark and show a photo-electric property under illumination conditions. In this article, the ideality factors of diodes in dark condition have been calculated, their electrical parameters of Jsc, Voc, FF and η under the illumination condition have been determined and these electrical properties have been discussed in details.

Yazarlar (2)

1
Serap Yigit Gezgin
2
Hamdi Şükür Kılıç

Anahtar Kelimeler

CdS CZTS Diode Efficiency Ideality factor PLD

Kurumlar

Selçuk Üniversitesi
Selçuklu Turkey

Metrikler

16
Atıf
2
Yazar
6
Anahtar Kelime