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Determination of photovoltaic parameters of CIGS hetero junction solar cells produced by PLD technique, using SCAPS simulation program

Vacuum · Ekim 2021

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YÖKSİS Kayıtları
Determination of photovoltaic parameters of CIGS hetero junction solar cells produced by PLD technique, using SCAPS simulation program
Vacuum · 2021 SCI-Expanded
Doç. Dr. SERAP YİĞİT GEZGİN →
Determination of photovoltaic parameters of CIGS hetero junction solar cells produced by PLD technique, using SCAPS simulation program
Vacuum · 2021 SCI-Expanded
Doç. Dr. YASEMİN GÜNDOĞDU KABAKCI →
YÖKSİS ISSN Eşleşmesi

Bu dergide (ISSN eşleşmesi) kurumun 4 kaydı bulundu.

YÖKSİS Kayıtları — ISSN Eşleşmesi
High frequency characteristics of tin oxide thin films on Si
2008 ISSN: 0042207X SCI-Expanded 12 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Vapor deposition of blanket polymeric nanocoatings on porous substrates for the facile preparation of thin film composite membranes
2016 ISSN: 0042-207X SCI-Expanded Q3
Prof. Dr. GÜLŞİN ARSLAN →
Determination of photovoltaic parameters of CIGS hetero junction solar cells produced by PLD technique, using SCAPS simulation program
2021 ISSN: 0042-207X SCI-Expanded Q2
Doç. Dr. SERAP YİĞİT GEZGİN →
Optical and morphological properties of DCM thin films co-doped of Znq2 by PVD: Theoretical and experimental investigations
2024 ISSN: 0042-207X SCI-Expanded Q2
Prof. Dr. ASLI KARAKAŞ →

Makale Bilgileri

Dergi Vacuum
ISSN0042207X
Yayın TarihiEkim 2021
Cilt / Sayfa192
DOI10.1016/j.vacuum.2021.110451
Scopus ID2-s2.0-85110005463
Özet In this study, CIGS ultrathin films of 52 nm, 89 nm, 183 nm and 244 nm thicknesses were grown on a n-Si substrate using PLD technique, then Ag/CIGS/Si/Al hetero-junction solar cells were formed by producing front finger and back contact. While the thickness of CIGS ultrathin film is increased, their grain sizes are also increased, crystal structures are developed and more light is absorbed within the thin film. The straight characteristics of hetero-junctions have been improved while the thicknesses of CIGS ultrathin film is decreased according to J-V characteristics of the hetero-junctions in the darkness. In addition, depending on CIGS ultrathin film thickness, the photovoltaic behavior of CIGS/Si hetero junction solar cells has been studied and interpreted in detail in this article. It can be concluded that CIGS/Si hetero-junction solar cell device produced based on CIGS ultrathin film of 183 nm thickness shows the highest short circuit current density and power conversion efficiency values among other thicknesses, with respect to J-V curve under the illumination (AM 1.5 solar radiation in 80 mW/cm2). Using SCAPS 1-D program, we have been able to successfully simulate CIGS/Si hetero-junction of 183 nm thickness.

Yazarlar (5)

1
Serap Yigit Gezgin
2
Amina HouimI
3
Yasemin Gündoğdu
4
Bedrettin Mercimek
5
Hamdi Şükür Kılıç

Anahtar Kelimeler

CIGS Efficiency PLD SCAPS simulation Solar cell Thickness Ultrathin film

Kurumlar

Necmettin Erbakan Üniversitesi
Meram Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Vacuum
Q1
SJR Skoru0,783
H-Index108
YayıncıElsevier Ltd
ÜlkeUnited Kingdom
Condensed Matter Physics (Q1)
Instrumentation (Q1)
Surfaces, Coatings and Films (Q1)
Dergi sayfasına git

Metrikler

26
Atıf
5
Yazar
7
Anahtar Kelime

Sistemimizdeki Yazarlar

YG
YASEMİN GÜNDOĞDU KABAKCI
Doç. Dr.

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