Scopus
YÖKSİS Eşleşti
The electrical properties of ZnO/Si heterojunction diode depending on thin film thickness
Journal of the Korean Physical Society · Temmuz 2022
YÖKSİS Kayıtları
The electrical properties of ZnO/Si heterojunction diode depending on thin film thickness
Journal of the Korean Physical Society · 2022 SCI-Expanded
PROFESÖR ADNAN BERBER →
The electrical properties of ZnO/Si heterojunction diode depending on thin film thickness
Journal of the Korean Physical Society · 2022 SCI-Expanded
DOKTOR ÖĞRETİM ÜYESİ ÜMMÜHAN AKIN →
The electrical properties of ZnO/Si heterojunction diode depending on thin film thickness
Journal of the Korean Physical Society · 2022 SCI-Expanded
DOÇENT YASEMİN GÜNDOĞDU KABAKCI →
The electrical properties of ZnO/Si heterojunction diode depending on thin film thickness
Journal of the Korean Physical Society · 2022 SCI-Expanded
DOÇENT SERAP YİĞİT GEZGİN →
The electrical properties of ZnO/Si heterojunction diode depending on thin film thickness
Journal of the Korean Physical Society · 2022 SCI-Expanded
DOÇENT YASEMİN GÜNDOĞDU KABAKCI →
Makale Bilgileri
DergiJournal of the Korean Physical Society
Yayın TarihiTemmuz 2022
Cilt / Sayfa81 · 139-149
Scopus ID2-s2.0-85130278615
Özet
In this work, ZnO thin films have been produced on p-Si wafer depending on number of laser pulses applied using pulse laser deposition (PLD) technique at room temperature conditions. Three different thicknesses of ZnO thin films (ZnO1, ZnO2 and ZnO3) have been produced by applying 18,000, 36,000 and 54,000 laser pulses and thicknesses of these produced three thin films have been measured to be 41 nm, 70 nm, 197 nm, respectively. It is observed in this work that while thicknesses of ZnO thin films increases, crystal structure of thin films develops, their grain size increase while their band gaps decrease. Ag/ZnO/Si/Au heterojunction diodes have been produced based on ZnO1, ZnO2 and ZnO3 thin films. After that, effect of thickness of thin film on electrical properties of diodes produced depending on number of laser pulses has been analyzed in detail. I–V characteristics of ZnO/Si heterojunction diodes produced have also been measured in darkness environment and under illumination conditions (AM 1.5 solar radiation of 80 mW/cm2) and results obtained have been interpreted and a conclusion has been made in this work. Furthermore, ideality factors, barrier heights and serial resistivities of these diodes have been calculated using conventional thermionic emission theory, Norde and Cheung-Cheung methods and then results obtained from analytical methods have been interpreted in detail in the present article. ZnO heterojunction diodes have exhibited photovoltaic properties under illumination conditions. It has been observed that as thickness of ZnO thin film is increased, Jsc and η values of the hetero junction diodes are increased. ZnO-3A hetero junction diode has exhibited the most improved photovoltaic performance. We have also theoretically investigated photo-electric properties of ZnO-3A heterojunction diode using SCAPS-1D packed software. The resulted J–V characteristics have been found very similar to measured counterparts.
Yazarlar (8)
1
Ümmühan Akın
2
Amina HouimI
3
Bahri Gezgin
4
Yasemin Gündoğdu
5
Sümeyye Kılıç
6
Bedrettin Mercimek
7
Adnan Berber
8
Serap Yigit Gezgin
Anahtar Kelimeler
Barrier height
Heterojunction diode
Ideality factor
PLD
SCAPS-1D
Serial resistivity
ZnO thin film
Kurumlar
Necmettin Erbakan Üniversitesi
Meram Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
3
Atıf
8
Yazar
7
Anahtar Kelime