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The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization

Journal of Alloys and Compounds · Nisan 2019

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YÖKSİS Kayıtları
The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization
Journal of Alloys and Compounds · 2019 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
YÖKSİS ISSN Eşleşmesi

Bu dergide (ISSN eşleşmesi) kurumun 20 kaydı bulundu.

YÖKSİS Kayıtları — ISSN Eşleşmesi
In-situ stabilization of the cubic phase of LLZO through the synergistic effect of In-doped-LLZO particles and PEO/LiTFSI solid electrolyte
2025 ISSN: 0925-8388 SCI-Expanded Q2
Dr. Öğr. Üyesi SEVDA SARAN →
Electrical properties of Au perylene monoimide p Si Schottky diode
2013 ISSN: 09258388 SCI-Expanded 11 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique
2014 ISSN: 09258388 SCI-Expanded 7 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Thickness dependence of dispersion parameters of the MoOx thin films prepared using the vacuum evaporation technique
2015 ISSN: 09258388 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
Electrical properties of Au perylene monoimide p Si Schottky diode
2013 ISSN: 09258388 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
Thickness dependence of dispersion parameters of the MoOx thin films prepared using the vacuum evaporation technique
2015 ISSN: 09258388 SCI-Expanded
Dr. Öğr. Üyesi ÜMMÜHAN AKIN →
Optical characterization of Cu2ZnSnSe4-xSx nanocrystals thin film
2016 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Optical characterization of Cu2ZnSnSe4 xSx nanocrystals thin film
2016 ISSN: 09258388 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Investigation of optical framework of chalcostibite nanocrystal thin films: An insight into refractive index dispersion, optical band gap and single-oscillator parameters
2017 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Electrical properties of Au/perylene-monoimide/p-Si Schottky diode
2013 ISSN: 0925-8388 SCI
Prof. Dr. BERNA GÜL →
The role of Triton X-100 as a surfactant on the CdO nanostructures grown by the SILAR method.
2017 ISSN: 09258388 SCI
Prof. Dr. RAŞİT AYDIN →
Characterization of Al/In:ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layers
2018 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Characterization of the framework of Cu doped TiO2 layers: An insight into optical, electrical and photodiode parameters
2019 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Transition metal Mn/Cu co-doped CdO transparent conductive films: Effect on structural, morphological and optical characteristics
2019 ISSN: 0925-8388 SCI
Prof. Dr. HALİT ÇAVUŞOĞLU →
Study of the local structure and electrical properties of gallium substituted LLZO electrolyte materials
2019 ISSN: 09258388 SCI-Expanded
Prof. Dr. ŞULE ATEŞ →
The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization
2019 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Study of the local structure and electrical properties of gallium substituted LLZO electrolyte materials
2019 ISSN: 0925-8388 SCI-Expanded
Prof. Dr. ÜLFET ATAV →
Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
2020 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Nitrogen-doped CQDs to enhance the power conversion efficiency of perovskite solar cells via surface passivation
2020 ISSN: 0925-8388 SCI-Expanded
Öğr. Gör. AYŞEGÜL TOPRAK →
Magnetic phase transitions of all-d metal Heusler type model
2020 ISSN: 0925-8388 SCI
Prof. Dr. GÜLİSTAN MERT →

Makale Bilgileri

ISSN09258388
Yayın TarihiNisan 2019
Cilt / Sayfa780 · 186-192
Özet Cu2WSe4 nanosheets were synthesized by the hot-injection method and put as interfacial layers between Au metal and p-Si by spin coating technique to investigate their photoresponse and capacitor properties via I-V and C-V measurements, respectively. The XRD were operated to confirm crystalline structure of the Cu2WSe4. The TEM image revealed that the crystalline nanosheet structures of the Cu2WSe4. The I-V measurements were performed under dark and light illumination in the range 20 mW–100 mW light intensities with 20 mW interval. In addition, some diode parameters such as ideality factor, barrier height and series resistance were extracted via a various method and discussed in the details. The C-V measurements were employed for various frequency and voltages. The C-V characteristics of the device confirmed the strong dependence on the frequency and voltage. The results imparted that Au/Cu2WSe4/p-Si can be employed for photodiode, photodetector and capacitor applications.

Yazarlar (4)

1
Adem Koçyiğit
2
Murat Yıldırım
3
Adem Sarilmaz
ORCID: 0000-0003-1463-9764
4
Faruk Ozel
ORCID: 0000-0002-3689-0469

Anahtar Kelimeler

Au/Cu WSe /p-Si photodiode 2 4 Copper tungsten selenide Cu WSe 2 4 Photodetector Schottky devices

Kurumlar

Iğdır Üniversitesi
Igdir Turkey
Karamanoğlu Mehmetbey Üniversitesi
Karaman Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Journal of Alloys and Compounds
Q1
SJR Skoru1,079
H-Index251
YayıncıElsevier B.V.
ÜlkeNetherlands
Materials Chemistry (Q1)
Mechanical Engineering (Q1)
Mechanics of Materials (Q1)
Metals and Alloys (Q1)
Dergi sayfasına git

Metrikler

43
Atıf
4
Yazar
5
Anahtar Kelime

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