Scopus
YÖKSİS DOI Eşleşti
SJR Q2
The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature
Journal of Materials Science Materials in Electronics · Temmuz 2019
YÖKSİS Kayıtları
The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature
Journal of Materials Science: Materials in Electronics · 2019 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
YÖKSİS Kayıtları — ISSN Eşleşmesi
High-performance polyoxometalate/p-Si photodetector enabling bias-free detection across the visible–NIR spectrum
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. MEHMET HAKAN ÇOLPAN →
CMTS: An inorganic hole-transport material for efficient and stable perovskite solar cells through surface defect passivation
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. FAHRİYE SARI →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI-Expanded 1 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded
Prof. Dr. İMREN HATAY PATIR →
A study of the influences of transition metal (Mn,Ni) co-doping on the morphological, structural and optical properties of nanostructured CdO films.
2018 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Frequency and voltage dependence of electrical modulus and dielectric studies of spin coated perylene–diimide (PDI) organic semiconductor films
2018 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Structural, morphological and optical studies of nanostructuredcadmium oxide films: the role of pH
2018 ISSN: 0957-4522 SCI
Prof. Dr. HALİT ÇAVUŞOĞLU →
The synthesis of 4,4\u2032-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q2
Prof. Dr. ÖMER FARUK YÜKSEL →
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Solution-processed nanostructured ZnO/CuO composite films and improvement its physical properties by lustrous transition metal silver doping
2020 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
2020 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Makale Bilgileri
ISSN09574522
Yayın TarihiTemmuz 2019
Cilt / Sayfa30 · 11994-12000
Scopus ID2-s2.0-85067695515
Özet
Cu2WSe4 nanosheets were synthesized by hot-injection method and employed as interfacial layers between the p-Si and Au metal via spin coating technique. The capacitance–voltage (C–V) and conductance-voltage (G–V) measurements were performed on the Cu2WSe4/p-Si heterojunction device depending on wide range temperatures from 80 to 400 K by 40 K steps. The device exhibited decreasing capacitance behavior with increasing temperature at the inversion region because of the interface states and series resistance. The conductance values increased with increasing temperature owing to increasing free charge carriers. The series resistance (Rs) and interface states density (Nss) were extracted from C–V and G–V measurements and discussed in the details. The results highlighted that the electrical parameters are a strong function of the voltage and temperature. The Au/Cu2WSe4/p-Si device can be employed for controllable capacitor applications.
Yazarlar (5)
1
Adem Koçyiğit
2
Hayreddin Küçükçelebi
3
Adem Sarilmaz
ORCID: 0000-0003-1463-9764
4
Faruk Ozel
ORCID: 0000-0002-3689-0469
5
Murat Yıldırım
Kurumlar
Iğdır Üniversitesi
Igdir Turkey
Karamanoğlu Mehmetbey Üniversitesi
Karaman Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Journal of Materials Science: Materials in Electronics
Q2
SJR Skoru0,493
H-Index117
YayıncıSpringer New York
ÜlkeUnited States
Atomic and Molecular Physics, and Optics (Q2)
Condensed Matter Physics (Q2)
Electrical and Electronic Engineering (Q2)
Electronic, Optical and Magnetic Materials (Q2)
Bioengineering (Q3)
Biomaterials (Q3)
Biomedical Engineering (Q3)
Biophysics (Q3)
Metrikler
6
Atıf
5
Yazar