Scopus
YÖKSİS Eşleşti
Temperature dependent current-voltage characteristics of Al/TiO<inf>2</inf>/n-Si and Al/Cu:TiO<inf>2</inf>/n-Si devices
Materials Science in Semiconductor Processing · Kasım 2019
YÖKSİS Kayıtları
Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices
Materials Science in Semiconductor Processing · 2019 SCI-Expanded
PROFESÖR MURAT YILDIRIM →
Makale Bilgileri
DergiMaterials Science in Semiconductor Processing
Yayın TarihiKasım 2019
Cilt / Sayfa103
Scopus ID2-s2.0-85068973549
Özet
We fabricated undoped and Cu doped TiO2 thin films by spin coating technique and employed the films as interfacial oxide layer between the Al and n-type Si to investigate the effect of temperature on the Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices. For that aim, the I–V measurements were performed in the range of 50 K–400 K by 50 K interval. The devices exhibited good rectifying behavior and thermal response in a wide range temperature. Ideality factor, barrier height and series resistance were calculated from I–V measurements for various temperatures by thermionic emission theory, Norde and Cheung methods and discussed in the details. The obtained results revealed that the device parameters are a strong function of the temperature. The interface states (Nss) were affected by the changing of the temperatures. The Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices can be performed for wide range temperatures in various technological applications.
Yazarlar (3)
1
Mehmet Okan Erdal
2
Adem Koçyiğit
3
Murat Yıldırım
Anahtar Kelimeler
Al/TiO /n-Si 2
Cu doped TiO thin films 2
Spin coating
Temperature-dependent I–V characteristics
Kurumlar
Iğdır Üniversitesi
Igdir Turkey
Necmettin Erbakan Üniversitesi
Meram Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
24
Atıf
3
Yazar
4
Anahtar Kelime