Scopus
YÖKSİS Eşleşti
The rate of Cu doped TiO<inf>2</inf> interlayer effects on the electrical characteristics of Al/Cu:TiO<inf>2</inf>/n-Si (MOS) capacitors depend on frequency and voltage
Microelectronics Reliability · Mart 2020
YÖKSİS Kayıtları
The rate of Cu doped TiO2 interlayer effects on the electrical characteristics of Al/Cu:TiO2/n-Si (MOS) capacitors depend on frequency and voltage
Microelectronics Reliability · 2020 SCI-Expanded
PROFESÖR MURAT YILDIRIM →
Makale Bilgileri
DergiMicroelectronics Reliability
Yayın TarihiMart 2020
Cilt / Sayfa106
Scopus ID2-s2.0-85078228036
Özet
In order to determine the surface states (Nss), series resistance (Rs), and (Cu:TiO2) interlayer effects on the electrical characteristics of the Al/Cu:TiO2/n-Si metal oxide semiconductor (MOS) capacitors, both capacitance (C) and conductance (G) values were measured for frequency ranges of 10 kHz–1 MHz and ±5 V voltage ranges. In addition, to know Cu doping concentration effect on the MOS capacitor, the Al/Cu:TiO2/n-Si was fabricated with various rates Cu:TiO2 interlayer (5, 10, 15%) grown on n-Si susbtrate by spin-coating. The increase in capacitance via decreasing frequencies was attributed to the existence of Nss and their relaxation time. The frequency dependent diffusion potential (Vd), doping of donor atoms (Nd), Fermi energy (EF), barrier height (Фb) and depletion layer width (Wd) values were extracted from the linear part of reverse bias C−2-V curves. While the value the Rs decreased with increasing frequency, the Nss values increased for the three MOS capacitors. The profiles of Nss and Rs depending on voltage were also plotted by Nicollian-Brews methods and using high-low frequency (CHF-CLF) capacitance, respectively. The mean values of Nss for three capacitors were found at about 1012 eV−1cm−2 as suitable electronic devices. The lower values of the Nss can be attributed to passivation effect of Cu:TiO2 interlayer.
Yazarlar (3)
1
Mehmet Okan Erdal
2
Adem Koçyiğit
3
Murat Yıldırım
Anahtar Kelimeler
Al/Cu:TiO /n-Si (MOS) capacitors 2
Cu doping effect
Series resistance
Surface states
Kurumlar
Iğdır Üniversitesi
Igdir Turkey
Necmettin Erbakan Üniversitesi
Meram Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
15
Atıf
3
Yazar
4
Anahtar Kelime