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Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application

Journal of Alloys and Compounds · Haziran 2020

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YÖKSİS Kayıtları
Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
Journal of Alloys and Compounds · 2020 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
YÖKSİS ISSN Eşleşmesi

Bu dergide (ISSN eşleşmesi) kurumun 20 kaydı bulundu.

YÖKSİS Kayıtları — ISSN Eşleşmesi
In-situ stabilization of the cubic phase of LLZO through the synergistic effect of In-doped-LLZO particles and PEO/LiTFSI solid electrolyte
2025 ISSN: 0925-8388 SCI-Expanded Q2
Dr. Öğr. Üyesi SEVDA SARAN →
Electrical properties of Au perylene monoimide p Si Schottky diode
2013 ISSN: 09258388 SCI-Expanded 11 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Investigation of optical band gap and device parameters of rubrene thin film prepared using spin coating technique
2014 ISSN: 09258388 SCI-Expanded 7 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Thickness dependence of dispersion parameters of the MoOx thin films prepared using the vacuum evaporation technique
2015 ISSN: 09258388 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
Electrical properties of Au perylene monoimide p Si Schottky diode
2013 ISSN: 09258388 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
Thickness dependence of dispersion parameters of the MoOx thin films prepared using the vacuum evaporation technique
2015 ISSN: 09258388 SCI-Expanded
Dr. Öğr. Üyesi ÜMMÜHAN AKIN →
Optical characterization of Cu2ZnSnSe4-xSx nanocrystals thin film
2016 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Optical characterization of Cu2ZnSnSe4 xSx nanocrystals thin film
2016 ISSN: 09258388 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Investigation of optical framework of chalcostibite nanocrystal thin films: An insight into refractive index dispersion, optical band gap and single-oscillator parameters
2017 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Electrical properties of Au/perylene-monoimide/p-Si Schottky diode
2013 ISSN: 0925-8388 SCI
Prof. Dr. BERNA GÜL →
The role of Triton X-100 as a surfactant on the CdO nanostructures grown by the SILAR method.
2017 ISSN: 09258388 SCI
Prof. Dr. RAŞİT AYDIN →
Characterization of Al/In:ZnO/p-Si photodiodes for various In doped level to ZnO interfacial layers
2018 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Characterization of the framework of Cu doped TiO2 layers: An insight into optical, electrical and photodiode parameters
2019 ISSN: 0925-8388 SCI-Expanded Q1
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Transition metal Mn/Cu co-doped CdO transparent conductive films: Effect on structural, morphological and optical characteristics
2019 ISSN: 0925-8388 SCI
Prof. Dr. HALİT ÇAVUŞOĞLU →
Study of the local structure and electrical properties of gallium substituted LLZO electrolyte materials
2019 ISSN: 09258388 SCI-Expanded
Prof. Dr. ŞULE ATEŞ →
The Au/Cu2WSe4/p-Si photodiode: Electrical and morphological characterization
2019 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Study of the local structure and electrical properties of gallium substituted LLZO electrolyte materials
2019 ISSN: 0925-8388 SCI-Expanded
Prof. Dr. ÜLFET ATAV →
Electrical properties of Al/PCBM:ZnO/p-Si heterojunction for photodiode application
2020 ISSN: 0925-8388 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Nitrogen-doped CQDs to enhance the power conversion efficiency of perovskite solar cells via surface passivation
2020 ISSN: 0925-8388 SCI-Expanded
Öğr. Gör. AYŞEGÜL TOPRAK →
Magnetic phase transitions of all-d metal Heusler type model
2020 ISSN: 0925-8388 SCI
Prof. Dr. GÜLİSTAN MERT →

Makale Bilgileri

ISSN09258388
Yayın TarihiHaziran 2020
Cilt / Sayfa827
Özet In this paper, the electrical characteristics of spin-coated PCBM:ZnO interlayered Al/PCBM:ZnO/Si diode are investigated under the aim of photodiode application. Under dark condition, the diode shows about four orders in magnitude rectification rate and diode illumination results in efficient rectification with increase in intensity. The analysis of current-voltage curve results a non-ideal diode characteristics according to the thermionic emission model due to the existence of parasitic resistances and interface states. The measured current-voltage values are used to extract the barrier height and ideality factor under dark and illumination conditions. Under illumination, photo-generated carriers contribute to the current flow and linear photo-conductivity behavior in photo-current measurements with illumination shows the possible use of hybrid PCBM:ZnO layer in Si-based photodiodes. In addition, change in the series and shunt resistance values under illumination is found to be effective in this light-sensing behavior of the diode. This characteristic is also observed from the typical on/off illumination switching behavior for the photodiodes in transient photo-current, photo-capacitance and photo-conductance measurements with the quick response to the illumination. The deviations from ideality are also discussed by means of distribution of interface states and series resistance depending on the applied frequency and bias voltage.

Yazarlar (4)

1
H. H. Gullu
ORCID: 0000-0001-8541-5309
2
Dilber Esra Yıldız
ORCID: 0000-0003-2212-199X
3
Adem Koçyiğit
4
Murat Yıldırım

Anahtar Kelimeler

Electrical properties PCBM:ZnO Photodiode Spin coating

Kurumlar

Atilim University
Ankara Turkey
Hitit University
Corum Turkey
Iğdır Üniversitesi
Igdir Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Journal of Alloys and Compounds
Q1
SJR Skoru1,079
H-Index251
YayıncıElsevier B.V.
ÜlkeNetherlands
Materials Chemistry (Q1)
Mechanical Engineering (Q1)
Mechanics of Materials (Q1)
Metals and Alloys (Q1)
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Metrikler

81
Atıf
4
Yazar
4
Anahtar Kelime

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