Scopus
YÖKSİS DOI Eşleşti
SJR Q2
W- and Mo-based polyoxometalates (POM) as interlayer in Al/n–Si photodiodes
Journal of Materials Science Materials in Electronics · Mayıs 2021
YÖKSİS Kayıtları
W- and Mo-based polyoxometalates (POM) as interlayer in Al/n\u2013Si photodiodes
Journal of Materials Science: Materials in Electronics · 2021 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
YÖKSİS Kayıtları — ISSN Eşleşmesi
High-performance polyoxometalate/p-Si photodetector enabling bias-free detection across the visible–NIR spectrum
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. MEHMET HAKAN ÇOLPAN →
CMTS: An inorganic hole-transport material for efficient and stable perovskite solar cells through surface defect passivation
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. FAHRİYE SARI →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI-Expanded 1 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded
Prof. Dr. İMREN HATAY PATIR →
A study of the influences of transition metal (Mn,Ni) co-doping on the morphological, structural and optical properties of nanostructured CdO films.
2018 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Frequency and voltage dependence of electrical modulus and dielectric studies of spin coated perylene–diimide (PDI) organic semiconductor films
2018 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Structural, morphological and optical studies of nanostructuredcadmium oxide films: the role of pH
2018 ISSN: 0957-4522 SCI
Prof. Dr. HALİT ÇAVUŞOĞLU →
The synthesis of 4,4\u2032-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q2
Prof. Dr. ÖMER FARUK YÜKSEL →
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Solution-processed nanostructured ZnO/CuO composite films and improvement its physical properties by lustrous transition metal silver doping
2020 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
2020 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Makale Bilgileri
ISSN09574522
Yayın TarihiMayıs 2021
Cilt / Sayfa32 · 12094-12110
Scopus ID2-s2.0-85103900089
Özet
W- and Mo-based POM layers were fabricated by a chemical method successfully. The FT-IR and NMR spectrometer were performed to obtain structural behaviors of the W- and Mo-based POMs. SEM and AFM image used to reveal the surface morphologies of the W- and Mo-based POMs. The pinhole and crack-free porous surfaces were obtained. Electrochemical behaviors of the W- and Mo-based POMs were studied a galvanostat. Then, the W- and Mo-based POM layers used as film layer between the Al and n-Si layer to obtain POM interlayered photodiodes Thus, the Al/n–Si (reference), Al/WPOM/n–Si and Al/MoPOM/n–Si photodiodes were fabricated by evaporating of the metallic and ohmic contact in a thermal evaporator. I–V measurements were performed on the photodiodes under dark and various light illumination intensities. The photodiodes exhibited good rectifying properties, but rectifying behavior decreased with POM interlayers and increasing light power intensity. The reverse currents of the Al/n–Si photodiode increased almost 1000 times at 100 mW/cm2. However, they increased almost 100 times for the Al/WPOM/n–Si and Al/MoPOM/n–Si photodiodes. Whereas the forward currents did not change for Al/n–Si photodiode, they increased with increasing light power in the case of Al/WPOM/n–Si and Al/MoPOM/n–Si photodiodes. Various diode parameters such as ideality factor, barrier height and series resistance values were calculated by various techniques and discussed in details. The detector parameters such as responsivity, photosensitivity and specific detectivity values were accounted and compared for the Al/n–Si, Al/WPOM/n–Si and Al/MoPOM/n–Si photodiodes with increasing light power. The POM interlayered photodiodes and photodetectors can be improved for industrial applications.
Yazarlar (6)
1
Esma Yenel
2
Yasemin Torlak
3
Adem Koçyiğit
4
Ibrahim Erden
5
Mahmut Kuş
6
Murat Yıldırım
Kurumlar
Bilecik Şeyh Edebali Üniversitesi
Bilecik Turkey
Iğdır Üniversitesi
Igdir Turkey
Konya Technical University
Konya Turkey
Pamukkale Üniversitesi
Denizli Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Yıldız Teknik Üniversitesi
Istanbul Turkey
Scimago Dergi (ISSN Eşleşmesi)
Journal of Materials Science: Materials in Electronics
Q2
SJR Skoru0,493
H-Index117
YayıncıSpringer New York
ÜlkeUnited States
Atomic and Molecular Physics, and Optics (Q2)
Condensed Matter Physics (Q2)
Electrical and Electronic Engineering (Q2)
Electronic, Optical and Magnetic Materials (Q2)
Bioengineering (Q3)
Biomaterials (Q3)
Biomedical Engineering (Q3)
Biophysics (Q3)
Metrikler
12
Atıf
6
Yazar