Scopus
YÖKSİS Eşleşti
W- and Mo-based polyoxometalates (POM) as interlayer in Al/n–Si photodiodes
Journal of Materials Science: Materials in Electronics · Mayıs 2021
YÖKSİS Kayıtları
W- and Mo-based polyoxometalates (POM) as interlayer in Al/n\u2013Si photodiodes
Journal of Materials Science: Materials in Electronics · 2021 SCI-Expanded
PROFESÖR MURAT YILDIRIM →
Makale Bilgileri
DergiJournal of Materials Science: Materials in Electronics
Yayın TarihiMayıs 2021
Cilt / Sayfa32 · 12094-12110
Scopus ID2-s2.0-85103900089
Özet
W- and Mo-based POM layers were fabricated by a chemical method successfully. The FT-IR and NMR spectrometer were performed to obtain structural behaviors of the W- and Mo-based POMs. SEM and AFM image used to reveal the surface morphologies of the W- and Mo-based POMs. The pinhole and crack-free porous surfaces were obtained. Electrochemical behaviors of the W- and Mo-based POMs were studied a galvanostat. Then, the W- and Mo-based POM layers used as film layer between the Al and n-Si layer to obtain POM interlayered photodiodes Thus, the Al/n–Si (reference), Al/WPOM/n–Si and Al/MoPOM/n–Si photodiodes were fabricated by evaporating of the metallic and ohmic contact in a thermal evaporator. I–V measurements were performed on the photodiodes under dark and various light illumination intensities. The photodiodes exhibited good rectifying properties, but rectifying behavior decreased with POM interlayers and increasing light power intensity. The reverse currents of the Al/n–Si photodiode increased almost 1000 times at 100 mW/cm2. However, they increased almost 100 times for the Al/WPOM/n–Si and Al/MoPOM/n–Si photodiodes. Whereas the forward currents did not change for Al/n–Si photodiode, they increased with increasing light power in the case of Al/WPOM/n–Si and Al/MoPOM/n–Si photodiodes. Various diode parameters such as ideality factor, barrier height and series resistance values were calculated by various techniques and discussed in details. The detector parameters such as responsivity, photosensitivity and specific detectivity values were accounted and compared for the Al/n–Si, Al/WPOM/n–Si and Al/MoPOM/n–Si photodiodes with increasing light power. The POM interlayered photodiodes and photodetectors can be improved for industrial applications.
Yazarlar (6)
1
Esma Yenel
2
Yasemin Torlak
3
Adem Koçyiğit
4
Ibrahim Erden
5
Mahmut Kuş
6
Murat Yıldırım
Kurumlar
Bilecik Şeyh Edebali Üniversitesi
Bilecik Turkey
Iğdır Üniversitesi
Igdir Turkey
Konya Technical University
Konya Turkey
Pamukkale Üniversitesi
Denizli Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Yıldız Teknik Üniversitesi
Istanbul Turkey
Metrikler
7
Atıf
6
Yazar