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Investigation photoelectric characteristics of ZnO/p-Si heterojunction structure modification with PCBM

Applied Physics A Materials Science and Processing · Ağustos 2022

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YÖKSİS Kayıtları
Investigation photoelectric characteristics of ZnO/p-Si heterojunction structure modification with PCBM
Applied Physics A · 2022 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
YÖKSİS ISSN Eşleşmesi

Bu dergide (ISSN eşleşmesi) kurumun 17 kaydı bulundu.

YÖKSİS Kayıtları — ISSN Eşleşmesi
Optical characterisation of CuInSe2 thin films prepared by two stage process
2001 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
Preparation and characterization of sol gel derived n ZnO thin film for Schottky diode application
2015 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. RÜŞTÜ GÜNTÜRKÜN →
Biocompatible yogurt carbon dots: evaluation of utilization for medical applications
2017 ISSN: 0947-8396 SCI-Expanded
Doç. Dr. SALİHA DİNÇ →
Biocompatible yogurt carbon dots: evaluation of utilization for medical applications
2017 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. MERYEM KARA →
Double doping synergy to improve structural, morphological, optical, and electrical properties of solution-based Cd and M (M: Pb, Sn, Bi) double doped nanocrystalline copper oxide films
2019 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. RAŞİT AYDIN →
Effects of Endogenous Molasses Carbon Dots on Macrophages and Their Potential Utilization as Anti-Inflammatory Agents
2020 ISSN: 0947-8396 SCI-Expanded
Doç. Dr. SALİHA DİNÇ →
Investigation of environmentally volatile pollutants sensing usingpillar[5]arene based macrocycle Langmuir–Blodgett film
2020 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. AHMED NURİ KURŞUNLU →
Effects of endogenous molasses carbon dots on macrophages and their potential utilization as anti-inflammatory agents
2020 ISSN: 0947-8396 SCI-Expanded
Doç. Dr. SALİHA DİNÇ →
Investigation of environmentally volatile pollutants sensing using pillar[5]arene-based macrocycle Langmuir–Blodgett film
2020 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. MUSTAFA ÖZMEN →
Optical characterisation of CuInSe2 thin films prepared by two-stage process
2001 ISSN: 0947-8396 SCI-Expanded Q3
Prof. Dr. ÖMER FARUK YÜKSEL →
Amplifying main physical characteristics of CuO films using ascorbic acid as the reducer and stabilizer agent
2021 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. RAŞİT AYDIN →
Investigation photoelectric characteristics of ZnO/p-Si heterojunction structure modification with PCBM
2022 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
Investigation of electrical properties of Al/LiCoO2/n-Si photodiode by ultrasonic spray pyrolysis method
2023 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights
2024 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
Electrical behaviors of the MXene nanoflower interlayered heterojunction Schottky photodiode devices
2024 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
Investigation of electrical properties of Al/LiCoO2/n-Si photodiode by ultrasonic spray pyrolysis method
2023 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. MUSTAFA KOYUNCU →
Electrical behaviors of the MXene nanoflower interlayered heterojunction Schottky photodiode devices
2024 ISSN: 0947-8396 SCI-Expanded Q2
Dr. Öğr. Üyesi FATİH DURMAZ →

Makale Bilgileri

Dergi Applied Physics A Materials Science and Processing
ISSN09478396
Yayın TarihiAğustos 2022
Cilt / Sayfa128
DOI10.1007/s00339-022-05842-0
Scopus ID2-s2.0-85134433559
Özet [6,6]-Phenyl C61-butyric acid methyl ester (PCBM) is a good electron transport material and can be employed in optoelectronic application. To understand the effect of the amount ratio on the capacitive behaviors, the pristine ZnO, 3%, 5% and 10% amounts PCBM (low amount) added ZnO interfacial layered Al/ZnO:PCBM/p-Si heterojunction structures have been fabricated by sol–gel spin-coating method and characterized by X-ray diffraction (XRD), capacitance–voltage (C-V) and conductance-voltage (G-V) measurements for the frequency range between 10 kHz and 1 MHz. Some electrical parameters of the pristine ZnO and various PCBM added ZnO interlayered devices have been calculated from 1/C2-V (1/capacitance2-voltage) plots for various frequencies. Moreover, capacitance transient (C-t) and conductance-transient (G-t) measurements of the Al/ZnO:PCBM/p-Si devices have been performed for various light illumination intensities from 20 to 100 mW/cm2 with 20 mW/cm2 increments under light illumination which has whole spectral matching. The results revealed that PCBM amount has a great effect on capacitance and conductivity values of the Al/ZnO:PCBM/p-Si devices.

Yazarlar (2)

1
Murat Yıldırım
2
Adem Koçyiğit

Anahtar Kelimeler

Al/ZnO:PCBM/p-Si devices C-V characterization Heterojunction structures Photosensing

Kurumlar

Bilecik Şeyh Edebali Üniversitesi
Bilecik Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Applied Physics A: Materials Science and Processing
Q2 OA
SJR Skoru0,474
H-Index172
YayıncıSpringer Heidelberg
ÜlkeGermany
Chemistry (miscellaneous) (Q2)
Materials Science (miscellaneous) (Q2)
Dergi sayfasına git

Metrikler

5
Atıf
2
Yazar
4
Anahtar Kelime

Sistemimizdeki Yazarlar

MY
MURAT YILDIRIM
Prof. Dr.

Hızlı Erişim

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