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Scopus YÖKSİS DOI Eşleşti SJR Q1

Si-based photosensitive diode with novel Zn-doped nicotinate/nicotinamide mixed complex interlayer

Materials Science in Semiconductor Processing · Ağustos 2022

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YÖKSİS Kayıtları
Si-based photosensitive diode with novel Zn-doped nicotinate/nicotinamide mixed complex interlayer
Materials Science in Semiconductor Processing · 2022 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
YÖKSİS ISSN Eşleşmesi

Bu dergide (ISSN eşleşmesi) kurumun 14 kaydı bulundu.

YÖKSİS Kayıtları — ISSN Eşleşmesi
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
2013 ISSN: 13698001 SCI-Expanded 11 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
2013 ISSN: 13698001 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices
2019 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Green preparation of Carbon Quantum dots using Gingko biloba to sensitize TiO2 for the photohydrogen production
2020 ISSN: 1369-8001 SCI-Expanded
Dr. Öğr. Üyesi GİZEM YILDIZ →
Green preparation of Carbon Quantum dots using Gingko biloba to sensitize TiO2 for the photohydrogen production
2020 ISSN: 1369-8001 SCI-Expanded
Prof. Dr. GÜLŞİN ARSLAN →
Hydrothermally synthesized UV light active zinc stannate:tin oxide (ZTO:SnO2) nanocomposite photocatalysts for photocatalytic applications
2020 ISSN: 1369-8001 SCI-Expanded
Doç. Dr. TEOMAN ÖZTÜRK →
Photosensing performances of heterojunctions-based photodiodes with novel complex interlayers
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Supercapacitor behaviors of carbon quantum dots by green synthesis method from tea fermented with Kombucha
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Si-based photosensitive diode with novel Zn-doped nicotinate/nicotinamide mixed complex interlayer
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Supercapacitor behaviors of carbon quantum dots by green synthesis method from tea fermented with kombucha
2022 ISSN: 1369-8001 SCI-Expanded Q2
Doç. Dr. CANAN BAŞLAK →
CeO2:BaMoO4 nanocomposite based 3D-printed electrodes for electrochemical detection of the dopamine
2024 ISSN: 1369-8001 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
2024 ISSN: 1369-8001 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature
2024 ISSN: 1369-8001 SCI Q2
Prof. Dr. HAZİRET DURMUŞ →
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
2024 ISSN: 1369-8001 SCI-Expanded Q1
Dr. Öğr. Üyesi FATİH DURMAZ →

Makale Bilgileri

Dergi Materials Science in Semiconductor Processing
ISSN13698001
Yayın TarihiAğustos 2022
Cilt / Sayfa147
DOI10.1016/j.mssp.2022.106750
Scopus ID2-s2.0-85129074610
Özet Al/Zn-complex/p-Si/Al metal-polymer-semiconductor (MPS) diode is deposited by using thermal evaporation technique for metal layers and spin-coating technique for polymer interface layer. Zn(C6H6N2O)2(C6H4NO2)2(H2O)].1/2(H2O) is prepared as a precursor material and different spin-coating solutions in terms of Zn-complex contribution (0.5, 1.0, 2.0 and 3.0 mg) are used in the film deposition process. The characterization of this precursor is provided by TEM imaging. In addition, deposited interface layers in different amount of Zn-complex in solution are investigated by AFM. Current-voltage (I−V), capacitance-voltage (C−V) and conductance-voltage (G−V) characteristics of the MPS diode are evaluated as a function of compositional change at the interface under dark and illumination conditions. Main diode parameters as barrier height, ideality factor and parasitic resistances are extracted from dark I−V curves and also they are discussed for the measurements under different illumination intensity. Capacitive behavior of these MPS diodes are observed by dark C−V and G−V measurements, and resistance values are also calculated from these results. The on/off illumination switching response of the diodes are observed from transient photo-current, photo-capacitance and photo-conductance plots.

Yazarlar (4)

1
H. H. Gullu
ORCID: 0000-0001-8541-5309
2
Dilber Esra Yıldız
ORCID: 0000-0003-2212-199X
3
D. A. Köse
4
Murat Yıldırım

Anahtar Kelimeler

Electrical characterization Polymer Schottky diode Spin-coating Thin film Zn-complex

Kurumlar

ASELSAN A.Ş.
Yenimahalle Turkey
Hitit University
Corum Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Materials Science in Semiconductor Processing
Q1
SJR Skoru0,767
H-Index105
YayıncıElsevier Ltd
ÜlkeUnited Kingdom
Condensed Matter Physics (Q1)
Mechanical Engineering (Q1)
Mechanics of Materials (Q1)
Materials Science (miscellaneous) (Q2)
Dergi sayfasına git

Metrikler

14
Atıf
4
Yazar
6
Anahtar Kelime

Sistemimizdeki Yazarlar

MY
MURAT YILDIRIM
Prof. Dr.

Hızlı Erişim

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