Scopus
YÖKSİS DOI Eşleşti
SJR Q2
Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface
Journal of Materials Science Materials in Electronics · Ocak 2024
YÖKSİS Kayıtları
Electrical characteristics of Al/AlGaAs/GaAs diode with high-Al concentration at the interface
Journal of Materials Science: Materials in Electronics · 2024 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
YÖKSİS Kayıtları — ISSN Eşleşmesi
High-performance polyoxometalate/p-Si photodetector enabling bias-free detection across the visible–NIR spectrum
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. MEHMET HAKAN ÇOLPAN →
CMTS: An inorganic hole-transport material for efficient and stable perovskite solar cells through surface defect passivation
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. FAHRİYE SARI →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI-Expanded 1 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded
Prof. Dr. İMREN HATAY PATIR →
A study of the influences of transition metal (Mn,Ni) co-doping on the morphological, structural and optical properties of nanostructured CdO films.
2018 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Frequency and voltage dependence of electrical modulus and dielectric studies of spin coated perylene–diimide (PDI) organic semiconductor films
2018 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Structural, morphological and optical studies of nanostructuredcadmium oxide films: the role of pH
2018 ISSN: 0957-4522 SCI
Prof. Dr. HALİT ÇAVUŞOĞLU →
The synthesis of 4,4\u2032-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q2
Prof. Dr. ÖMER FARUK YÜKSEL →
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Solution-processed nanostructured ZnO/CuO composite films and improvement its physical properties by lustrous transition metal silver doping
2020 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
2020 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Makale Bilgileri
ISSN09574522
Yayın TarihiOcak 2024
Cilt / Sayfa35
Scopus ID2-s2.0-85182603955
Özet
In this study, GaAs-based Schottky diode is fabricated by Al metal contact and Al0.95Ga0.5As interface layer. Thin film layer is epitaxially grown on GaAs with high ratio of Al in the composition. Compositional, crystallographic structure and surface of the film layer are investigated by in situ reflectance, X-ray diffraction and SEM measurements, respectively. The diode is characterized by room-temperature current–voltage (I- V ) measurements under continuous illumination and also transient illumination condition with different intensities in the range of 20–100 mW/cm2. Under bias, the diode shows single Schottky diode characteristics with about two-order rectifying behavior at dark and slight increase in rectification behavior is observed by increasing illumination intensity. Experimental dark and illuminated I- V curves are formulated by traditional thermionic emission model and the resulting forward biased semi-logarithmic I- V relations are analyzed to get insight into ideality and barrier height formation. Dark ideality factor and barrier height values are calculated as about 2.32 and 0.64 eV, respectively. Deviation from diode ideality increases with illumination is observed whereas there is a decrease in barrier height of the junction. Saturation from ideal I- V characteristics at high forward bias region is dominated by resistance effect. At this region, series resistance values are evaluated by Cheung’s theory. Additionally, switch on/off light response of the diode is observed from transient photo-current measurements for various illumination intensities. Both carrier generation under illumination and trapping mechanism at dark exhibit photo-sensitivity characteristic of the diode. As a result, increase in current flow together with improvement in rectifying behavior with illumination indicates that the diode can be adapted in opto-electronics applications.
Yazarlar (5)
1
H. H. Gullu
ORCID: 0000-0001-8541-5309
2
Dilber Esra Yıldız
ORCID: 0000-0003-2212-199X
3
Murat Yıldırım
4
I. Demir
5
I. Altuntas
Kurumlar
ASELSAN A.Ş.
Yenimahalle Turkey
Cumhuriyet Üniversitesi
Sivas Turkey
Hitit University
Corum Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Journal of Materials Science: Materials in Electronics
Q2
SJR Skoru0,493
H-Index117
YayıncıSpringer New York
ÜlkeUnited States
Atomic and Molecular Physics, and Optics (Q2)
Condensed Matter Physics (Q2)
Electrical and Electronic Engineering (Q2)
Electronic, Optical and Magnetic Materials (Q2)
Bioengineering (Q3)
Biomaterials (Q3)
Biomedical Engineering (Q3)
Biophysics (Q3)
Metrikler
7
Atıf
5
Yazar