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A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights

Applied Physics A Materials Science and Processing · Şubat 2024

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YÖKSİS Kayıtları
A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights
Applied Physics A · 2024 SCI-Expanded
Prof. Dr. MURAT YILDIRIM →
YÖKSİS ISSN Eşleşmesi

Bu dergide (ISSN eşleşmesi) kurumun 17 kaydı bulundu.

YÖKSİS Kayıtları — ISSN Eşleşmesi
Optical characterisation of CuInSe2 thin films prepared by two stage process
2001 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. HALUK ŞAFAK →
Preparation and characterization of sol gel derived n ZnO thin film for Schottky diode application
2015 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. RÜŞTÜ GÜNTÜRKÜN →
Biocompatible yogurt carbon dots: evaluation of utilization for medical applications
2017 ISSN: 0947-8396 SCI-Expanded
Doç. Dr. SALİHA DİNÇ →
Biocompatible yogurt carbon dots: evaluation of utilization for medical applications
2017 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. MERYEM KARA →
Double doping synergy to improve structural, morphological, optical, and electrical properties of solution-based Cd and M (M: Pb, Sn, Bi) double doped nanocrystalline copper oxide films
2019 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. RAŞİT AYDIN →
Effects of Endogenous Molasses Carbon Dots on Macrophages and Their Potential Utilization as Anti-Inflammatory Agents
2020 ISSN: 0947-8396 SCI-Expanded
Doç. Dr. SALİHA DİNÇ →
Investigation of environmentally volatile pollutants sensing usingpillar[5]arene based macrocycle Langmuir–Blodgett film
2020 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. AHMED NURİ KURŞUNLU →
Effects of endogenous molasses carbon dots on macrophages and their potential utilization as anti-inflammatory agents
2020 ISSN: 0947-8396 SCI-Expanded
Doç. Dr. SALİHA DİNÇ →
Investigation of environmentally volatile pollutants sensing using pillar[5]arene-based macrocycle Langmuir–Blodgett film
2020 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. MUSTAFA ÖZMEN →
Optical characterisation of CuInSe2 thin films prepared by two-stage process
2001 ISSN: 0947-8396 SCI-Expanded Q3
Prof. Dr. ÖMER FARUK YÜKSEL →
Amplifying main physical characteristics of CuO films using ascorbic acid as the reducer and stabilizer agent
2021 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. RAŞİT AYDIN →
Investigation photoelectric characteristics of ZnO/p-Si heterojunction structure modification with PCBM
2022 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
Investigation of electrical properties of Al/LiCoO2/n-Si photodiode by ultrasonic spray pyrolysis method
2023 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights
2024 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
Electrical behaviors of the MXene nanoflower interlayered heterojunction Schottky photodiode devices
2024 ISSN: 0947-8396 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
Investigation of electrical properties of Al/LiCoO2/n-Si photodiode by ultrasonic spray pyrolysis method
2023 ISSN: 0947-8396 SCI-Expanded
Prof. Dr. MUSTAFA KOYUNCU →
Electrical behaviors of the MXene nanoflower interlayered heterojunction Schottky photodiode devices
2024 ISSN: 0947-8396 SCI-Expanded Q2
Dr. Öğr. Üyesi FATİH DURMAZ →

Makale Bilgileri

Dergi Applied Physics A Materials Science and Processing
ISSN09478396
Yayın TarihiŞubat 2024
Cilt / Sayfa130
DOI10.1007/s00339-024-07284-2
Scopus ID2-s2.0-85182476171
Erişim🔓 Açık Erişim
Özet This work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal–organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of current–voltage (I–V), current–time (I–t), capacitance–time (C–t), and conductance time (G–t). The photodiode’s rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (R s) and shunt resistance (R sh). R s values are calculated using Cheung’s functions, revealing the diode’s resistance behavior. The study also examines the photodiode’s photoconductivity and photoconductance, finding a non-linear relationship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device’s light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, revealing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode’s behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.

Yazarlar (3)

1
O. Surucu
2
Dilber Esra Yıldız
ORCID: 0000-0003-2212-199X
3
Murat Yıldırım

Anahtar Kelimeler

Electrical characterization MIS Photodiode Schottky diode Si Si N 3 4

Kurumlar

Atilim University
Ankara Turkey
Hitit University
Corum Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Applied Physics A: Materials Science and Processing
Q2 OA
SJR Skoru0,474
H-Index172
YayıncıSpringer Heidelberg
ÜlkeGermany
Chemistry (miscellaneous) (Q2)
Materials Science (miscellaneous) (Q2)
Dergi sayfasına git

Metrikler

27
Atıf
3
Yazar
6
Anahtar Kelime

Sistemimizdeki Yazarlar

MY
MURAT YILDIRIM
Prof. Dr.

Hızlı Erişim

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