Scopus
🔓 Açık Erişim YÖKSİS Eşleşti
A study on the dark and illuminated operation of Al/Si<inf>3</inf>N<inf>4</inf>/p-Si Schottky photodiodes: optoelectronic insights
Applied Physics A: Materials Science and Processing · Şubat 2024
YÖKSİS Kayıtları
A study on the dark and illuminated operation of Al/Si3N4/p-Si Schottky photodiodes: optoelectronic insights
Applied Physics A · 2024 SCI-Expanded
PROFESÖR MURAT YILDIRIM →
Makale Bilgileri
DergiApplied Physics A: Materials Science and Processing
Yayın TarihiŞubat 2024
Cilt / Sayfa130
Scopus ID2-s2.0-85182476171
Erişim🔓 Açık Erişim
Özet
This work extensively investigates the operation of an Al/ Si3N4/p-Si Schottky-type photodiode under dark and varying illumination intensities. The photodiode is fabricated by employing the metal–organic chemical vapor deposition (MOCVD) method. A thorough electrical characterization is performed at room temperature, encompassing measurements of current–voltage (I–V), current–time (I–t), capacitance–time (C–t), and conductance time (G–t). The photodiode’s rectification factor and reverse bias area increased under illumination. The relationship between light power density, barrier height, and diode ideality factor is found. The study also found a strong correlation between light intensity and applied voltage on series resistance (R s) and shunt resistance (R sh). R s values are calculated using Cheung’s functions, revealing the diode’s resistance behavior. The study also examines the photodiode’s photoconductivity and photoconductance, finding a non-linear relationship between photocurrent and illumination intensity, suggesting bimolecular recombination. Calculated photosensitivity (K), responsivity (R), and detectivity (D*) values show the device’s light response effectiveness, but efficiency decreases at higher illumination intensities. Transient experiments indicate stable and reproducible photocurrent characteristics, revealing photogenerated charge temporal evolution. This study provides a complete understanding of the Al/Si3N4/p-Si Schottky photodiode’s behavior under different illumination intensities. The findings advance optoelectronic device knowledge and enable their use in advanced technologies.
Yazarlar (3)
1
O. Surucu
2
Dilber Esra Yıldız
ORCID: 0000-0003-2212-199X
3
Murat Yıldırım
Anahtar Kelimeler
Electrical characterization
MIS
Photodiode
Schottky diode
Si
Si N 3 4
Kurumlar
Atilim University
Ankara Turkey
Hitit University
Corum Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
4
Atıf
3
Yazar
6
Anahtar Kelime