CANLI
Yükleniyor Veriler getiriliyor…
/ Makaleler / Scopus Detay
Scopus 🔓 Açık Erişim YÖKSİS Eşleşti

Novel PANI:Borophene/Si Schottky device for the sensitive detection of illumination and NaCl salt solutions

Journal of Materials Science: Materials in Electronics · Mart 2024

YÖKSİS DOI Eşleşmesi Bulundu

Bu Scopus makalesi YÖKSİS veritabanında da kayıtlı. Aşağıda YÖKSİS verilerini görebilirsiniz.

YÖKSİS Kayıtları
Novel PANI:Borophene/Si Schottky device for the sensitive detection of illumination and NaCl salt solutions
Journal of Materials Science: Materials in Electronics · 2024 SCI-Expanded
PROFESÖR MURAT YILDIRIM →

Makale Bilgileri

DergiJournal of Materials Science: Materials in Electronics
Yayın TarihiMart 2024
Cilt / Sayfa35
Erişim🔓 Açık Erişim
Özet Metal/semiconductor structures, particularly Schottky diodes, play a crucial role in semiconductor identification and the production of electronic devices, like solar cells, photodetectors, photodiodes, and field-effect transistors (FETs). These structures are of great interest due to their ability to modify electrical and optical properties, responding to external factors such as illumination and temperature. However, despite extensive research in this field, there has been limited exploration of silicon-based metal/semiconductor structures incorporating PANI:Borophene interfacial materials. In this study, we prepared PANI:Borophene/p-Si and PANI:Borophene/n-Si structures and examined their photodiode properties using various measurements. The unoccupied trap levels (m) obtained 0.44 and 0.33 for Al/PANI:Borophene/p-Si and Au/PANI:Borophene/n-Si device, respectively. Our investigation revealed that both structures exhibited rectification behavior, with linear characteristics in the forward bias region, and deviations attributed to series resistance effects at higher voltages. Moreover, the presence of borophene in the interfacial layer led to improvements in the devices’ electrical properties. Finally, the PANI:Borophene/Si Schottky diodes was tested for salt detection and the Al/PANI:Borophene/p-Si diode has the characteristics of salt (NaCl) concentration detection sensor and it successfully detected salt concentration changes with respect to current flow.

Yazarlar (7)

1
Dilber Esra Yıldız
ORCID: 0000-0003-2212-199X
2
S. Karadeniz
3
Murat Yıldırım
4
Nevin Taşaltın
5
A. Gulsaran
6
B. Bastug Azer
7
M. Yavuz

Kurumlar

Giresun Üniversitesi
Giresun Turkey
Hitit University
Corum Turkey
Selçuk Üniversitesi
Selçuklu Turkey
T.C. Maltepe Universitesi
Istanbul Turkey
University of Waterloo
Waterloo Canada
Waterloo Institute for Nanotechnology
Waterloo Canada

Metrikler

1
Atıf
7
Yazar

Sistemimizdeki Yazarlar