Scopus
YÖKSİS Eşleşti
Optimizing optoelectronics performance: theoretical and experimental study on ZnO thin film for Al/ZnO/p-Si photodiode
Physica Scripta · Kasım 2024
YÖKSİS Kayıtları
Optimizing Optoelectronics Performance: Theoretical and Experimental study on ZnO Thin Film for Al/ZnO/p-Si Photodiode
Physica Scripta · 2024 SCI-Expanded
PROFESÖR MURAT YILDIRIM →
Makale Bilgileri
DergiPhysica Scripta
Yayın TarihiKasım 2024
Cilt / Sayfa99
Scopus ID2-s2.0-85205813070
Özet
In this paper, a ZnO photodiode in a p-n heterojunction configuration is fabricated on a p-type Si substrate focusing specifically on ZnO/p-Si heterojunction photosensitive devices and photodiodes (PDs) using Al contacts. Through an experimental and theoretical analysis approach aims to evaluate the effects of important parameters, including ZnO layer thickness, defect density, and contact materials, on PD’s efficiency. Numerical analysis simulations comparatively examine the experimentally fabricated device performance at a 5 nm ZnO layer thickness by balancing photon absorption and carrier formation while minimizing carrier transport limitations. Experimentally process, an Atomic Layer Deposition (ALD) system was used to grow ZnO interlayers on one side of the polished Si wafer. Then, Al metallic contacts were created on the ZnO layers using a hole array mask. The PDs were then subjected to electrical characterization using I-V and I-t measurements under various illumination densities. Al/ZnO/p-Si PD’s device with active performance has been produced and analyzed with electrical parameters such as barrier height, photocurrent, spectral response, ideality factor and EQE were derived, analyzed and studied. In conclusion, this work provides a comprehensive understanding of the performance of Al/ZnO/p-Si PD at varying illumination intensities and offering a detailed analysis of key parameters influencing device efficiency for future optoelectronics applications.
Yazarlar (3)
1
Abdullah Karaca
ORCID: 0000-0001-5001-5559
2
Dilber Esra Yıldız
ORCID: 0000-0003-2212-199X
3
Murat Yıldırım
Anahtar Kelimeler
EQE
layer thickness
SCAPS-1D
spectral response
ZnO/p-Si heterojunction photosensitive devices
Kurumlar
Bozok Üniversitesi
Yozgat Turkey
Hitit University
Corum Turkey
Selçuk Üniversitesi
Selçuklu Turkey