Scopus
YÖKSİS Eşleşti
The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature
International Journal of Electronics · Nisan 2019
YÖKSİS Kayıtları
The analysis of the electrical characteristics and interface state densities of Re/n-type Si Schottky barrier diodes at room temperature
International Journal of Electronics · 2019 SCI-Expanded
PROFESÖR HAZİRET DURMUŞ →
Makale Bilgileri
DergiInternational Journal of Electronics
Yayın TarihiNisan 2019
Cilt / Sayfa106 · 507-520
Scopus ID2-s2.0-85057214822
Özet
The main electrical characteristics of current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature of the Re/n-type Si Schottky barrier diodes prepared by pulsed laser deposition (PLD) method have been examined. The values of the basic electrical properties such as forward saturation current (Io), ideality factors (n), barrier heights (Фbo), rectification ratio (RR) and series resistances (RS) were obtained from I-V and C-V measurements using different calculation methods. At low voltages (V ≤ 0.3 V), the electrical conduction was formed to take place by thermionic emission, whereas at high voltages (V > 0.3 V), a space charge limited conduction mechanism was shown. Furthermore, the interface state densities (NSS) as a function of energy distribution (ESS- EV) was obtained from the I-Vdata by taking into account the bias dependence of the effective barrier height (Φb) for the Re/n-type Si Schottky barrier diodes.
Yazarlar (2)
1
Haziret Durmuş
2
Şükrü Karataş
Anahtar Kelimeler
Electrical parameters
interface states
rectification ratio
series resistance
surface potential
Kurumlar
Kahramanmaras Sütçü Imam Üniversitesi
Kahramanmaras Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
14
Atıf
2
Yazar
5
Anahtar Kelime