Scopus
YÖKSİS DOI Eşleşti
SJR Q2
On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60-400 K
Journal of Materials Science Materials in Electronics · Mayıs 2019
YÖKSİS Kayıtları
On the possible conduction mechanisms in Rhenium/n-GaAs Schottky barrier diodes fabricated by pulsed laser deposition in temperature range of 60\u2013400 K
Journal of Materials Science: Materials in Electronics · 2019 SCI-Expanded
Prof. Dr. HAZİRET DURMUŞ →
YÖKSİS Kayıtları — ISSN Eşleşmesi
High-performance polyoxometalate/p-Si photodetector enabling bias-free detection across the visible–NIR spectrum
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. MEHMET HAKAN ÇOLPAN →
CMTS: An inorganic hole-transport material for efficient and stable perovskite solar cells through surface defect passivation
2026 ISSN: 0957-4522 SCI-Expanded Q2
Öğr. Gör. FAHRİYE SARI →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI-Expanded 1 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Optical dispersion and dielectric properties of rubrene organic semiconductor thin film
2014 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Dr. Öğr. Üyesi ZEYNEP KİŞNİŞCİ →
Optical characterization of Cu2ZnSnS4 nanocrystals thin film
2016 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of optical and device parameters of colloidal copper tungsten selenide ternary nanosheets
2017 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Investigation of structural, optical and dielectrical properties of Cu2WS4 thin film
2017 ISSN: 0957-4522 SCI-Expanded
Prof. Dr. İMREN HATAY PATIR →
A study of the influences of transition metal (Mn,Ni) co-doping on the morphological, structural and optical properties of nanostructured CdO films.
2018 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The effect of the triangular and spherical shaped CuSbS2 structure on the electrical properties of Au/CuSbS2/p-Si photodiode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Frequency and voltage dependence of electrical modulus and dielectric studies of spin coated perylene–diimide (PDI) organic semiconductor films
2018 ISSN: 0957-4522 SCI
Prof. Dr. ÖMER FARUK YÜKSEL →
Structural, morphological and optical studies of nanostructuredcadmium oxide films: the role of pH
2018 ISSN: 0957-4522 SCI
Prof. Dr. HALİT ÇAVUŞOĞLU →
The synthesis of 4,4\u2032-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The C–V characteristics of the Cu2WSe4/p-Si heterojunction depending on wide range temperature
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
A comparison of the electrical characteristics of TiO2/p-Si/Ag, GNR-TiO2/p-Si/Ag and MWCNT-TiO2/p-Si/Ag photodiodes
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
The synthesis of 4,4′-(9,9-dioctyl-9H-fluorene-2,7-diyl)bis(N,N-diphenylaniline) organic semiconductor and use of it as an interlayer on Au/n-Si diode
2019 ISSN: 0957-4522 SCI-Expanded Q2
Prof. Dr. ÖMER FARUK YÜKSEL →
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
2019 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Solution-processed nanostructured ZnO/CuO composite films and improvement its physical properties by lustrous transition metal silver doping
2020 ISSN: 0957-4522 SCI
Prof. Dr. RAŞİT AYDIN →
The dielectric performance of Au/CuCo5S8/p-Si heterojunction for various frequencies
2020 ISSN: 0957-4522 SCI-Expanded Q3
Prof. Dr. MURAT YILDIRIM →
Makale Bilgileri
ISSN09574522
Yayın TarihiMayıs 2019
Cilt / Sayfa30 · 9029-9037
Scopus ID2-s2.0-85064275083
Özet
This study presents electrical characteristics of n-GaAs based Schottky barrier diodes (SBDs) with Rhenium (Re) rectifier contacts. The electrical characteristics of the Re/n-GaAs SBDs were investigated utilizing the forward bias current-voltage (IF-VF) data collected in temperature range of 60-400 K. The values of ideality factor (n) and zero-bias barrier height (ΦBo) were found as 9.10 and 0.11 eV for 60 K, and 1.384 and 0.624 eV for 400 K, respectively, on the basis of thermionic-emission theory. The conventional Richardson plot deviated from linearity at low temperatures and the Richardson constant value (A*) was obtained quite lower than the theoretical value for this semiconductor (8.16 A cm-2 K-2). nkT/q-kT/q plot shows that the field-emission may be dominant mechanism at low temperatures as a result of tunneling via surface states since the studied n-GaAs’s doping concentration is on the order of 1018 cm-3, i.e. at high values so leads to tunneling. On the other hand, ΦBo-n, ΦBo-q/2kT and (n-1-1)-q/2kT plots exhibit linearity but this linearity is observed for two temperature regions (60-160 K and 180-400 K) due the presence of double Gaussian distribution (GD) of the barrier height. Therefore, the standard deviation value was obtained from the plot of ΦBo-q/2kT and it was used for modifying the conventional Richardson plot into the modified Richardson plot by which the values of mean barrier height and A* were obtained as 0.386 eV and 15.55 A cm-2 K-2 and 0.878 eV and 8.35 A cm-2 K-2 for the low and high temperature regions, respectively. As a result, IF-VF-T characteristics of the Re/n-GaAs SBDs were successfully elucidated by double-GD of barrier height.
Yazarlar (3)
1
Haziret Durmuş
2
Mert Yıldırım
ORCID: 0000-0002-8526-1802
3
Şemsettin Altındal
Kurumlar
Düzce Üniversitesi
Duzce Turkey
Gazi Üniversitesi
Ankara Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Scimago Dergi (ISSN Eşleşmesi)
Journal of Materials Science: Materials in Electronics
Q2
SJR Skoru0,493
H-Index117
YayıncıSpringer New York
ÜlkeUnited States
Atomic and Molecular Physics, and Optics (Q2)
Condensed Matter Physics (Q2)
Electrical and Electronic Engineering (Q2)
Electronic, Optical and Magnetic Materials (Q2)
Bioengineering (Q3)
Biomaterials (Q3)
Biomedical Engineering (Q3)
Biophysics (Q3)
Metrikler
28
Atıf
3
Yazar