Scopus
YÖKSİS Eşleşti
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
Current Applied Physics · Aralık 2022
YÖKSİS Kayıtları
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
CURRENT APPLIED PHYSICS · 2022 SCI
PROFESÖR HAZİRET DURMUŞ →
The effect of temperature on the electrical characteristics of Ti/n-GaAs Schottky diodes
CURRENT APPLIED PHYSICS · 2022 SCI
PROFESÖR BEKİR ÇAKIR →
Makale Bilgileri
DergiCurrent Applied Physics
Yayın TarihiAralık 2022
Cilt / Sayfa44 · 85-89
Scopus ID2-s2.0-85139290174
Özet
Schottky diodes still attract researchers as they are used in various device applications. This study provides I–V characteristics of Ti/n-GaAs (80–300 K). Higher barrier height (ΦB0) values were obtained for higher temperatures, whereas the ideality factor exhibited the opposite behavior. This was associated with a barrier inhomogeneity at the Ti/GaAs interface, which has a Gaussian distribution (GD). The mean barrier height values calculated from the modified Richardson and ΦB0 - q/2 kT plots were found to be 0.584 eV and 0.575 eV in the temperature range of 80–160 K. They were found as 1.041 eV and 1.033 eV between 180 K and 300 K, respectively. The modified Richardson constant value, on the other hand, was calculated as 22.06 A cm−2 K−2 (80–160 K) and 13.167 A cm−2 K−2 (180–300 K). These values are higher than the theoretical value for n-GaAs, which is 8.16 A cm−2 K−2. This difference may stem from intense inhomogeneity at the Ti/n-GaAs interface.
Yazarlar (4)
1
Haziret Durmuş
2
A. Tataroglu
ORCID: 0000-0003-2074-574X
3
Şemsettin Altındal
4
Mert Yıldırım
ORCID: 0000-0002-8526-1802
Anahtar Kelimeler
Barrier inhomogeneities
Gaussian distribution
Ideality factor
Schottky diode
Series resistance
Temperature effect
Kurumlar
Düzce Üniversitesi
Duzce Turkey
Gazi Üniversitesi
Ankara Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
12
Atıf
4
Yazar
6
Anahtar Kelime