Scopus
🔓 Açık Erişim YÖKSİS Eşleşti
High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S:DLC)/p-Si (MIS) structures
Journal of Materials Science: Materials in Electronics · Ocak 2024
YÖKSİS Kayıtları
High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S:DLC)/p-Si (MIS) structures
Journal of Materials Science: Materials in Electronics · 2024 SCI
PROFESÖR HAZİRET DURMUŞ →
Makale Bilgileri
DergiJournal of Materials Science: Materials in Electronics
Yayın TarihiOcak 2024
Cilt / Sayfa35
Scopus ID2-s2.0-85182989722
Erişim🔓 Açık Erişim
Özet
Complex dielectric (ε* = ε′ − jε″)/electric modulus (M* = M′ + jM″), loss tangent (tanδ), and ac conductivity (σ ac) properties of Au/(S-DLC)/p-Si structures were investigated by utilizing admittance/impedance measurements between 80 and 440 K at 0.1 and 0.5 MHz. Sulfur-doped diamond-like carbon (S:DLC) was used an interlayer at Au/p-Si interface utilizing electrodeposition method. The capacitance/conductance (C/G) or (ε' ~ C) and (ε″ ~ G) values found to be highly dependent on both frequency and temperature. The increase of them with temperatures was attributed to the thermal-activated electronic charges localized at interface states (N ss) and decrease in bandgap energy of semiconductor. The observed high ε′ and ε″ values at 0.1 MHz is the result of the space/dipole polarization and N ss. Because the charges are at low frequencies, dipoles have sufficient time to rotation yourself in the direction of electric field and N ss can easily follow the ac signal. Arrhenius plot (ln(σ ac) vs 1/T) shows two distinctive linear parts and activation energy (E a) value was found as 5.78 and 189.41 from the slope; this plot at 0.5 MHz is corresponding to low temperature (80–230 K) and high temperature (260–440 K), respectively. The observed higher E a and ε′ (~ 14 even at 100 kHz) show that hopping of electronic charges from traps to others is predominant charge transport mechanism and the prepared Au/(S:DLC)/p-Si structure can be used to store more energy.
Yazarlar (5)
1
A. Tataroglu
ORCID: 0000-0003-2074-574X
2
Haziret Durmuş
3
A. Feizollahi Vahid
4
B. Avar
5
Şemsettin Altındal
Kurumlar
Bülent Ecevit University
Zonguldak Turkey
Gazi Üniversitesi
Ankara Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
3
Atıf
5
Yazar