Scopus
YÖKSİS Eşleşti
Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer
Materials Today Communications · Mart 2024
YÖKSİS Kayıtları
Evaluation of the current transport mechanism depending on the temperature of Schottky structures with Ti:DLC interlayer
Materials Today Communications · 2024 SCI
PROFESÖR HAZİRET DURMUŞ →
Makale Bilgileri
DergiMaterials Today Communications
Yayın TarihiMart 2024
Cilt / Sayfa38
Scopus ID2-s2.0-85181153002
Özet
This study emphasizes the possible current transport mechanisms (CTMs) of the Schottky structure with Ti:DLC interlayer for a wide temperature interval (80–470 K). In the related temperature interval, the ideality factor (n) and barrier height (ΦBo) values changed from 6.95 to 2.28 and 0.19 to 0.87 eV, respectively. These temperature dependent n and ΦBo values show that the CTM deviates significantly from the standard TE theory and that the barrier at the metal/semiconductor interface is not homogeneous. Additionally, the observed deviation from linearity of the Richardson plot (RP) at low temperatures and obtained very low Richardson constant (A*) at higher temperatures when compared to its theoretical value are other evidence of deviation from TE theory. The observed two separate linear in the ΦBo-e/2kT plot reveal the Double-Gaussian distribution (DGD) corresponding low and moderate temperature intervals. The modified RP based on the GD of the BH gives a closer to the theoretical value of A*. Along with CTM analyses, the structure's series resistance (RS) was estimated via both Ohm's law and Cheung functions. Finally, the Card-Rhoderick method was applied to achieve the variations of the interface trap density (Dit) depending on energy for each temperature by considering voltage-dependent n and ΦB.
Yazarlar (6)
1
Esra Erbilen Tanrıkulu
2
Berkün
3
Murat Ulusoy
ORCID: 0000-0001-9842-0318
4
B. Avar
5
Haziret Durmuş
6
Şemsettin Altındal
Anahtar Kelimeler
Current transport mechanisms (CTMs)
Gaussian distribution (GD)
Series resistance (R ), and energy-dependent interface trap density (D ) S it
Ti:DLC interlayer
Kurumlar
Bülent Ecevit University
Zonguldak Turkey
Gazi Üniversitesi
Ankara Turkey
Selçuk Üniversitesi
Selçuklu Turkey
Metrikler
8
Atıf
6
Yazar
4
Anahtar Kelime