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The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature

Materials Science in Semiconductor Processing · Aralık 2024

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YÖKSİS Kayıtları
The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature
Materials Science in Semiconductor Processing · 2024 SCI
Prof. Dr. HAZİRET DURMUŞ →
YÖKSİS ISSN Eşleşmesi

Bu dergide (ISSN eşleşmesi) kurumun 14 kaydı bulundu.

YÖKSİS Kayıtları — ISSN Eşleşmesi
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
2013 ISSN: 13698001 SCI-Expanded 11 atıf
Prof. Dr. ÖMER FARUK YÜKSEL →
Frequency dependent interface state properties of a Schottky device based on perylene monoimide deposited on n type silicon by spin coating technique
2013 ISSN: 13698001 SCI-Expanded
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Temperature dependent current-voltage characteristics of Al/TiO2/n-Si and Al/Cu:TiO2/n-Si devices
2019 ISSN: 1369-8001 SCI-Expanded Q1
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Green preparation of Carbon Quantum dots using Gingko biloba to sensitize TiO2 for the photohydrogen production
2020 ISSN: 1369-8001 SCI-Expanded
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Green preparation of Carbon Quantum dots using Gingko biloba to sensitize TiO2 for the photohydrogen production
2020 ISSN: 1369-8001 SCI-Expanded
Prof. Dr. GÜLŞİN ARSLAN →
Hydrothermally synthesized UV light active zinc stannate:tin oxide (ZTO:SnO2) nanocomposite photocatalysts for photocatalytic applications
2020 ISSN: 1369-8001 SCI-Expanded
Doç. Dr. TEOMAN ÖZTÜRK →
Photosensing performances of heterojunctions-based photodiodes with novel complex interlayers
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Supercapacitor behaviors of carbon quantum dots by green synthesis method from tea fermented with Kombucha
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Si-based photosensitive diode with novel Zn-doped nicotinate/nicotinamide mixed complex interlayer
2022 ISSN: 1369-8001 SCI-Expanded Q1
Prof. Dr. MURAT YILDIRIM →
Supercapacitor behaviors of carbon quantum dots by green synthesis method from tea fermented with kombucha
2022 ISSN: 1369-8001 SCI-Expanded Q2
Doç. Dr. CANAN BAŞLAK →
CeO2:BaMoO4 nanocomposite based 3D-printed electrodes for electrochemical detection of the dopamine
2024 ISSN: 1369-8001 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
2024 ISSN: 1369-8001 SCI-Expanded Q2
Prof. Dr. MURAT YILDIRIM →
The probe of current conduction mechanisms, interface states, and the forward bias intersection point of the al/Al2O3/Ge/p-Si heterostructures depending on temperature
2024 ISSN: 1369-8001 SCI Q2
Prof. Dr. HAZİRET DURMUŞ →
High responsivity and external quantum efficiency of polyoxometalate interlayered Schottky type photodiode device
2024 ISSN: 1369-8001 SCI-Expanded Q1
Dr. Öğr. Üyesi FATİH DURMAZ →

Makale Bilgileri

Dergi Materials Science in Semiconductor Processing
ISSN13698001
Yayın TarihiAralık 2024
Cilt / Sayfa184
DOI10.1016/j.mssp.2024.108781
Scopus ID2-s2.0-85200648211
Özet The current conduction mechanisms (CCMs), temperature-sensitivities (S), energy-dependent interface traps (Nss), and origin of the intersection points in the forward bias (IF−VF) plots of the Al/Al2O3/Ge/p-Si heterostructure were investigated in wide temperature range of 90–420 K. Firstly, main electrical parameters, including reverse-saturation current (Io), ideality factor (n), zero-bias barrier-height (ΦBo), and series-resistance (Rs) values, were extracted for each temperature. The lnIF-VF curves illustrate two distinct linear regimes at low and intermediate bias voltages. Despite the observed decline in n values as temperature rises, the corresponding ΦBo values exhibit an upward trend. The conventional Richardson plots deviated from linearity at low temperatures, and the Richardson-constants (A*) value obtained from its linear part is quite lower than its theoretical value. Hence, ΦBo−q/2 kT, ΦBo−n, and n(kT)/q−(kT/q) correlations were plotted to seek indications of the Gaussian distribution (GD) of barrier heights (BHs) and tunneling mechanism. Temperate sensitivity (S = dV/dT) for 0.01, 0.10, 0.50, and 1 μA was found as 2.30, 2.33, 2.34, and 2.35 mV/K, which indicated that the fabricated Al/Al₂O₃/Ge/p-Si heterostructure is highly sensitive to temperature, rendering it suitable for use in temperature sensor applications. The observed crossing point at about 2.4V was explained by an increase in the apparent BH with temperature and the presence of Rs.

Yazarlar (5)

1
Buket Akın
2
Sabreen A.Hameed
3
Seçkin Altındal Yerişkin
4
Murat Ulusoy
ORCID: 0000-0001-9842-0318
5
Haziret Durmuş

Anahtar Kelimeler

Energy-dependent interface traps Gaussian distribution Intersection point Possible conduction mechanisms Temperature sensitivity

Kurumlar

Gazi Üniversitesi
Ankara Turkey
Selçuk Üniversitesi
Selçuklu Turkey
University Of Diyala
Baqubah Iraq
Scimago Dergi (ISSN Eşleşmesi)
Materials Science in Semiconductor Processing
Q1
SJR Skoru0,767
H-Index105
YayıncıElsevier Ltd
ÜlkeUnited Kingdom
Condensed Matter Physics (Q1)
Mechanical Engineering (Q1)
Mechanics of Materials (Q1)
Materials Science (miscellaneous) (Q2)
Dergi sayfasına git

Metrikler

19
Atıf
5
Yazar
5
Anahtar Kelime

Sistemimizdeki Yazarlar

HD
HAZİRET DURMUŞ
Prof. Dr.

Hızlı Erişim

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