Gadolinium Oxide (Gd₂O₃)-based photodetectors have garnered significant attention owing to their exceptional electrical and optical characteristics, establishing them as promising candidates for next-generation optoelectronic devices. In this study, a Gd<inf>2</inf>O<inf>3</inf>-based Schottky photodetector was fabricated, and its electrical, optical, and structural characteristics were systematically examined. Gd<inf>2</inf>O<inf>3</inf> nanoparticles were successfully characterized via XRD, SEM, and SEM-EDS. Remarkably, the device achieved a high specific detectivity and external quantum efficiency under 351–1600 nm wavelengths, demonstrating its potential for high-performance UV-Vis-NIR photodetection applications. Notably, the fabricated device has shown a detectivity and external quantum efficiency of 2.64 × 10⁹ Jones and 11.86 % at 351 nm, respectively. These results underscore the significant promise of Gd<inf>2</inf>O<inf>3</inf>-based photodetectors for next-generation optoelectronic devices, paving the way for their integration into cutting-edge sensing and imaging technologies.