In this study, Al/PANI: Rubrene/p-Si Schottky photodiodes were produced. To perform this process, different amounts of Rubrene were added to the PANI and used as an interfacial material in device. In order to evaluate the electrical properties of produced device, various photo-response measurements, were made in dark and at illumination intensities (from 20 to 100 mW/cm2 with 20 mW/cm2 intervals) depending on amount of additives. The measurement results were analyzed and some performance parameters such as ideality factor (n), barrier height (ΦB), saturation current (Io), and series resistance (Rs) were calculated. The highest photocurrent values were obtained between 4.46 × 10–2 A and 6.50 × 10–2 A depending on increasing light intensity for diode with a ratio of 1:0.5. Responsivity and sensitivity have been found to be 4.97 A/W and 10.44, respectively, at 100 mW/cm2. Maximum detectivity has found 6.25 × 1010 Jones at 20 mW/cm2 light intensity for device at 1:0.5 ratio. These measurements showed that all devices were sensitive to the light. In addition, the light sensitivity of diodes varies depending on the amount of mixing. As a result of data obtained, it was seen that devices demonstrated photovoltaic properties and were found to be usable for optoelectronic applications.