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SCI-Expanded JCR Q2 Özgün Makale Scopus
Investigation of the Influence of Au (Gold) Doping Concentration on the Structural, Morphological, Optical, and Electrical Parameters of an Al/Au:CuO/n-Si Heterojunction Device
JOURNAL OF ELECTRONIC MATERIALS 2024 Cilt 53 Sayı 5
Scopus Eşleşmesi Bulundu
1
Atıf
53
Cilt
2382-2397
Sayfa
🔓
Açık Erişim
Scopus Yazarları: Halit Cavusoglu, Adem Koçyiğit, Huseyin Sakalak, Murat Yıldırım, Ali Akbar Hussaini, Fatih Durmaz
Özet
In this investigation, we achieved successful deposition of nanostructured cupric oxide (CuO) thin films onto glass substrates through implementation of successive ionic layer adsorption and reaction (SILAR), all carried out at room temperature. This approach has proven to be highly efficient and yielded favorable results in terms of film quality and uniformity. A comprehensive investigation was conducted to analyze the effect of gold (Au) on the structural, morphological, optical, and electrical properties of nanocrystalline CuO thin films. The structural analysis confirmed that the films were polycrystalline, exhibiting a monoclinic crystal structure with preferential orientations along the (1¯11) and (111) planes. The estimated crystallite sizes ranged from 20.37 to 30.77 nm, indicating the nanoscale nature of the films. Scanning electron microscopy/energy-dispersive x-ray analysis (SEM/EDX) was executed to reveal the Au dopant on the surface of CuO thin films. Surface analysis revealed the presence of uniformly dispersed CuO nanostructures across the film surfaces. Through optical investigations, it was observed that the bandgap energy of the CuO thin films decreased from 1.52 to 1.45 eV with increasing Au concentration. Furthermore, the average transmittance of the films exhibited a decrease from 4.9% to 1.3% as the Au concentration increased. The electrical properties of the Al/Au:CuO/n-Si heterojunction were studied using current–voltage (I–V) measurements for various light power densities. The Al/Au:CuO/n-Si heterojunction exhibited good photodiode behavior, with 3.44 A/W responsivity and 1.58 × 1010 Jones specific detectivity for the 2% Au-doped CuO interfacial layer.
Anahtar Kelimeler (Scopus)
electrical characteristics heterojunction Au SILAR CuO thin film

Anahtar Kelimeler

SILAR CuO thin film electrical characteristics heterojunction Au

Makale Bilgileri

Dergi JOURNAL OF ELECTRONIC MATERIALS
ISSN 0361-5235
Yıl 2024 / 1. ay
Cilt / Sayı 53 / 5
Sayfalar 2382 – 2397
Makale Türü Özgün Makale
Hakemlik Hakemli
Endeks SCI-Expanded
JCR Quartile Q2
TEŞV Puanı 24,00
Yayın Dili Türkçe
Kapsam Uluslararası
Toplam Yazar 6 kişi
Erişim Türü Basılı+Elektronik
Erişim Linki Makaleye Git
Alan Fen Bilimleri ve Matematik Temel Alanı Kimya Analitik Kimya SILAR, CuO thin film, electrical characteristics, heterojunction, Au

YÖKSİS Yazar Kaydı

Yazar Adı ÇAVUŞOĞLU HALİT,HUSSAİNİ ALİ AKBAR,SAKALAK HÜSEYİN,KOÇYİĞİT ADEM,DURMAZ FATİH,YILDIRIM MURAT
YÖKSİS ID 8464079

Metrikler

Scopus Atıf 1
JCR Quartile Q2
TEŞV Puanı 24,00
Yazar Sayısı 6