The material used in the devices produced and the technique in which the material is prepared are of great importance. Atomic layer deposition is a very important technique that stands out due to its excellent properties. In this study, a Schottky-type device was produced with a 5 nm thick ZnO film coated on n-type silicon by atomic layer coating technique. SEM images were taken to investigate the coating quality of the deposited material. Then, the behavior of the produced device in the face of temperature change was analyzed. In addition, the photodiode and detector performances were investigated by exposing light, which is another external stimulus, at different intensities. Some electrical parameters of the Au/ZnO/n-Si Schottky-type device is sensitive to both temperature and light. In addition, the ideality factor value of the Au/ZnO/n-Si Schottky-type device was 2.08 at 220 and 1.27 at 400 K. In addition to these parameters, the responsivity and detectivity values were found to be 0.074 A/W and 6.07 × 109 Jones for 100 mW/cm2 light intensity, respectively. Based on the measurements performed under the influence of both light stimuli and temperature, it can be stated that the Au/ZnO/n-Si Schottky-type device has a very stable structure. The performed all measurements and analyses show that the ZnO material coated with the self-controlled atomic layer coating technique and the Au/ZnO/n-Si device produced with this material can be used in optoelectronic technology.