The importance of the photodetectors has grown due to their potential in the automation system and optical communications. We fabricated Al/TiO2/p-Si and Al/ZnO/p-Si Schottky-type photodetectors. TiO2 and ZnO interlayers were grown by atomic layer deposition (ALD). The photodetection properties of these devices were studied and compared by I–V and I-t measurements for various light power densities and various wavelengths. Scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectra were employed to determine morphological and elemental analysis of the TiO2 and ZnO interlayers. While the SEM images showed smooth surfaces, EDX spectra approved successful synthesis of the TiO2 and ZnO interlayers with good stoichiometry. The diode parameters such as ideality factor, series resistance and barrier height values were calculated and compared in detail. The responsivity and detectivity of the fabricated photodetectors were determined as a function of illumination power density and wavelength. The responsivity values of the Al/TiO2/p-Si and Al/ZnO/p-Si photodetectors were determined as 0.02 and 0.76 A/W, respectively. Both photodetectors exhibited good performance for visible light. However, Al/ZnO/p-Si photodetector reached 173.08% external quantum efficiency (EQE) for 550 nm. According to results, Al/ZnO/p-Si photodetector exhibited better detection performance than Al/TiO2/p-Si.