Scopus Eşleşmesi Bulundu
3
Atıf
219
Cilt
Scopus Yazarları: Amina HouimI, Serap Yigit Gezgin, Hamdi Şükür Kılıç
Özet
Herein, three different backsurface-filed (BSF) layers “SnS, PbS, and V2O5” are investigated on Mo/BSF/CZTS/CdS/AZO heterojunction solar cells using experimental data of CdS thin films. CdS thin films are produced by means of the pulsed laser deposition (PLD) technique with three different deposition periods. With increasing deposition time, the crystalline sizes of CdS thin films are larger and their crystal structures are developed. In addition, the optical bandgap of CdS thin films is calculated to be 2.4 eV using the absorbance data. Using the solar cell–capacitance–simulator-1D (SCAPS-1D) program, the experimental properties of CdS thin films to estimate the performance of p-CZTS/n-CdS/AZO heterojunction solar cells are introduced. The best efficiency is 9.32% when the thickness of CdS reaches 150 nm. To further improve the efficiency, different BSF layers (SnS, PbS, and V2O5) are tested in Mo/BSF/CZTS/CdS/AZO solar cells. According to the thickness of the BSF layer, the efficiency of the solar cell increases up to 13.47%, 14.7%, and 17.41% using SnS, PbS, and V2O5 as BSF layers with 0.1 μm thickness.
Anahtar Kelimeler (Scopus)
back-surface filed
CdS thin films
pulsed laser deposition
solar cells
solar cell–capacitance–simulator-1D program
Anahtar Kelimeler
back-surface filed
CdS thin films
pulsed laser deposition
solar cells
solar cell–capacitance–simulator-1D program
Makale Bilgileri
Dergi
physica status solidi (a)
ISSN
1862-6300
Yıl
2022
/ 1. ay
Cilt / Sayı
219
Makale Türü
Özgün Makale
Hakemlik
Hakemli
Endeks
SCI-Expanded
JCR Quartile
Q3
TEŞV Puanı
54,00
Yayın Dili
İngilizce
Kapsam
Uluslararası
Toplam Yazar
3 kişi
Erişim Türü
Elektronik
Erişim Linki
Makaleye Git
Alan
Fen Bilimleri ve Matematik Temel Alanı
Fizik
Malzeme Fiziği
Optoelektronik
Yarı İletkenler
YÖKSİS Yazar Kaydı
Yazar Adı
HOUIMI Amina, YİĞİT GEZGİN SERAP, KILIÇ HAMDİ ŞÜKÜR
YÖKSİS ID
6331632
Hızlı Erişim
Metrikler
Scopus Atıf
3
JCR Quartile
Q3
TEŞV Puanı
54,00
Yazar Sayısı
3