Coronene/n-Si Schottky structure has been fabricated by Coronene thin film deposited on n-Si substrate using the spin coating technique. The current-voltage (I-V) characteristics of the diode have been evaluated under various illumination intensities to determine photodiode behavior. Photovoltaic parameters of the fabricated diode have been calculated at different illumination intensities. The Coronene/n-Si diode presents a photovoltaic status with a maximum short-circuit current (Isc) of 13.1 μA and open circuit voltage (Voc) of 0.16 V under 100 mW/cm2 illumination intensity. The recombination process of the Coronene/n-Si diode shows the existence of bimolecular recombination mechanism associated with the trap levels in the band gap. Also, the series resistance and interface state density distribution of the photodiode have been estimated by capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics at various frequencies. The experimental results indicated that the Al/Coronene/n-Si diode can be used as a photodiode in optoelectronic and photovoltaic applications.